Close up view of the deposition chamber of a chemical vapor deposition reactor used to deposit

Close up view of the deposition chamber of a chemical vapor deposition reactor used to deposit a compositional spread of metal oxides (TiO2, SnO2 and HfO2). Each of the individual precursors (anhydrous titanium, tin and hafnium nitrate) are sprayed from one of the three nozzles which are approximately 1 cm above the silicon substrate.

This work was supported by National Science Foundation grant CHE 00-76141. For further information about this research, see "New Materials Key to Shrinking Memory Devices," a story in the NSF News Media Tipsheet for March 4, 2002.