Microsemi Announces RF Transistor for Secondary Surveillance Radar Aviation Applications
ALISO VIEJO, Calif., Aug. 30, 2012 /PRNewswire/ – Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced its 1011GN-700ELM, the first in a family of radio frequency (RF) transistors for high-power air traffic control (ATC), secondary surveillance radio (SSR) applications. SSR is used to send a message to an aircraft equipped with a radar transponder and collect information that allows air traffic controllers to identify, track and measure the location of that particular airplane. Microsemi’s new 700 watt (W) peak 1011GN-700ELM operates at 1030 megahertz (MHz) and supports short- and long-pulsed extended length message (ELM). The new transistor is based on gallium nitride (GaN) on silicon carbide (SiC) technologies, which are particularly well-suited for high-power electronics applications.
“We are aggressively driving the development of next-generation GaN on SiC power devices to address growing opportunities for higher performance aerospace and military applications,” said David Hall, vice president of Microsemi’s RF Integrated Systems product group. “With today’s new product introduction, we now offer highly reliable GaN on SiC transistors at 250, 500 and 700 watts for secondary surveillance radar search and tracking applications. We also have several additional GaN on SiC transistors in development that we will be rolling out later this year.”
Microsemi’s upcoming product lineup includes multiple high-pulsed power GaN on SiC transistors for both L, S and C-band radar systems. The company also offers a suite of GaN microwave power devices, which includes the following S-band radar models: 2729GN-150, 2729GN-270, 2731GN-110M, 2731GN-200M, 3135GN-100M, 3135GN-170M, 2735GN-35M and 2735GN-100M. Several new products are in development for L-band avionics products covering 960-1215 MHz; L-band radar covering 1200-1400MHz; and S-band radar, higher power devices covering 2.7-2.9 GHz.
About the 1011GN-700ELM RF Transistor
The 1011GN-700ELM transistor delivers unparalleled performance of 700W of peak power with 21 decibel (dB) of power gain and 70 percent drain efficiency at 1030 Mhz to improve reduce overall drain current and heat dissipation. Other key product features include:
Short- and long-pulse burst formats: ELM = 2.4 ms, 64 percent and 6.4 percent LTD Excellent output power: 700W High power gain: >21 dB min Controlled dynamic range: 1.0dB increments, 15 dB total Drain bias - Vdd: +65V
Systems benefits that are achieved with GaN on SiC high electron mobility transistor (HEMT) include:
- Single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining
- Highest peak power and power gain for reduced system power stages and final stage combining
- Single stage pair provides 1.3 kilowatts (kW) with margin, four-way combined to provide full system 4 kW
- High operating voltage at 65 volts reduces power supply size and dc current demand
- Extremely rugged performance improves system yields
- Amplifier size is 50 percent smaller than devices built with Si BJT or LDMOS
Packaging and Availability
The 1011GN-700ELM is offered in a single-ended package and is built with 100 percent high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability. Microsemi offers Demo units which are put on loan to the customer for a few weeks; due to the cost of the product free samples are not provided. Demo units are available now to qualified customers and technical datasheets are available on the Microsemi website at www.microsemi.com. For more information please send an email to firstname.lastname@example.org.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense and security, aerospace, as well as industrial and medical markets. Products include mixed-signal integrated circuits, SoCs and ASICS; programmable logic solutions; power management products; timing and voice processing devices; RF solutions; discrete components; and Power-over-Ethernet ICs and midspans. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.
“Safe Harbor” Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its 1011GN-700ELM RF transistor and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company’s products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company’s most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi’s future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
SOURCE Microsemi Corporation