RF Micro Devices Expands RF Product Portfolio

RF Micro Devices, a manufacture of radio systems and solutions, has expanded its RF product portfolio to include microwave and millimeter wave components.

According to the company, the new RF Micro Devices (RFMD) products include gallium arsenide pseudomorphic high electron mobility transistor (pHEMT) gain blocks and low noise amplifiers (LNAs) targeting the base station, satellite communications and short-haul telecommunications segments of the wireless infrastructure market.

The multi-purpose pHEMT amplifier MMICs support all wireless applications in the 1GHz to 16GHz frequency range and applications include gain blocks up to 5W, satellite communications and point-to-point and point-to-multi-point radio link systems.

According to RFMD, pHEMT LNAs are packaged field effect transistors supporting low noise and medium-power amplifier applications in the 0.5-18GHz frequency range, and applications include base station systems, terrestrial satellite communications and short-haul telecommunications.

John Pelose, general manager of wireless infrastructure business unit at RFMD, said: “RFMD’s ability to leverage core capabilities, such as our RF design expertise and our leadership in compound semiconductors, enables the company to aggressively target new customers in new markets, including the high-value wireless infrastructure and point-to-point markets.”