Toshiba 43nm NAND Flash Selected as the Most Innovative Non-Volatile Memory by Semiconductor Insights
Posted on: Thursday, 9 April 2009, 13:55 CDT
"This is the first NAND flash die to use a high-k inter-poly dielectric instead of the traditional oxide/nitride/oxide dielectric. In addition, Toshiba 43nm NAND flash packs 16Gbit(1) into a single die of approximately 120mm(2) that uses an all-bitline architecture to improve performance," said
"We're honored to receive this recognition of the innovations in our 43nm NAND flash memory, which enable performance advantages in our Single-Level Cell and Multi-Level Cell NAND flash product lines as well as our advanced solid state drives," said
The Insight Awards program recognizes companies for achieving technical strides through innovative design and technological advancements in the semiconductor industry. The awards were presented at the EE Times ACE Awards and Insight Award presentation on
TechInsights is a leading source of business and technology information for the electronics industry with global brands such as EE Times, Semiconductor Insights, TechOnline, the Embedded Systems Conference, and Portelligent.
About Toshiba Corp. and TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, Preliminary 2008 Worldwide Market Share Analysis,
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at www.chips.toshiba.com, or from your TAEC representative.
MEMY 09 563
(1) When used herein in relation to memory density, gigabit and/or Gbit means 1,024x1,024x1,024 = 1,073,741,824 bits. Usable capacity may be less. For details, please refer to specifications.
SOURCE Toshiba America Electronic Components, Inc.
Source: PR Newswire
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