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Global Next Generation Memory Market Reviewed by MarketsandMarkets in New Report Now Available at MarketPublishers.com

December 15, 2012

New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography” created by MarketsandMarkets has been recently published by Market Publishers Ltd. According to the study, the worldwide next generation memory market is predicted to witness growth at a CARG of over 7.2% over 2012-2017.

London, UK (PRWEB) December 14, 2012

The worldwide next generation memory market is predicted to witness growth at a CARG of over 7.2% over 2012-2017 to amount to more than USD 90.7 million by 2017. The extensive application of currently available memories, the advantages of the next generation memories such as high durability, rapid switching and energy efficiency are the key market drivers. Samsung, SK Hynix, Micron, Elpida, Toshiba, Powerchip, Winbond, Fujitsu, Nanya, Rambus, Everspin Technology, IDT Incorporated and HP are amid the dominant market players.

The Asia-Pacific is the largest regional market for the next generation memories, with Japan, South Korea and China being on the top positions. Next generation memory markets in regional developing countries, for example, in India and Thailand, are considered to have positive future perspectives. Unfavorable economic conditions in Europe created by global crisis force regional companies to search for better business opportunities in Africa, the Middle East and North America.

New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography” created by MarketsandMarkets has been recently published by Market Publishers Ltd.

Report Details:

Title: Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography

Published: December, 2012

Pages: 254

Price:    US$ 4,650.00

http://marketpublishers.com/report/hardware/data_storage/global-next-generation-memory-market-2012-2017-by-technology-dram-sram-flash-memory-memristor-magneto-resistive-ram-mram-phase-change-ram-pcram.html

The report provides an extensive guide to the global next generation memory market. It categorizes the market on the basis of type, applications, and geography. The research offers information on the market size, shape, segmentation, reveals major development trends of the market and characterizes the key forces driving and limiting the market growth. The study indicates the growth opportunities for the market and also includes the Porter´s five forces market model. Competitive environment of the market, recent business activities such as mergers and acquisitions along with the data on leading companies are disclosed in the report. Furthermore, the discussion of the future prospects for the next generation memory market up to 2017 is at hand in the research.

Reasons to Buy:

  •     The report provides valuable data on the next generation memory market which will help one to understand market trends.
  •     The research report will help in planning business strategies as it reveals future prospects for the market and comprises a detailed analysis of the market competition.
  •     The report includes data on the most recent market events.

More new market research reports by the publisher can be found at MarketsandMarkets page.

For the original version on PRWeb visit: http://www.prweb.com/releases/prweb2012/12/prweb10239382.htm


Source: prweb



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