MarketsandMarkets: Global 3D IC and TSV Interconnect Market worth $6.55 Billion by 2016
DALLAS, April 4, 2012 /PRNewswire/ –
According to a new market research report “Three-dimensional Integrated Circuit (3D
IC/Chip) & Through-Silicon Via (TSV) Interconnects Market – Global Forecast & Trend
Analysis (2011 – 2016) By Technology (Substrate, Bonding Techniques, Process Realization,
Fabrication), Products (Memory, LED, Sensor, MEMS, Power & Analog Components) &
Applications (Mobile Devices, Processors, ICT, Networking, Automotive, Defense)” published
by MarketsandMarkets (http://www.marketsandmarkets.com), the total 3D IC market is
expected to reach $6.55 billion by 2016 at a CAGR of 16.9% from 2011 to 2016.
Browse 30 tables and in-depth TOC on 3D IC Chip and TSV Interconnect Market -Global
Forecast and Analysis (2011-2016).
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The transition from 2 dimensional (2D) packaging to 3D packaging is considered to be
one of the major developments in the semiconductor industry. 3D packaging is observed to
pave way for the concept of “More than Moore” with comparatively lesser investment. This
has led to strategic innovation with respect to 3D integration despite the economic
downturn. The use of TSV interconnects within die stack instead of wirebond interconnect
and board-level routing helps to save the system energy consumption to a large extent.
Some of the early innovations related to TSV include that from Samsung (South Korea) and
The two categories of substrates used in the production of 3D ICs include silicon on
insulator (SOI) and bulk silicon. High cost is observed to be the key factor hindering the
adoption of SOI wafer on a large scale. The different bonding techniques employed include
die to die, die to wafer, wafer to wafer, direct bonding, adhesive bonding, and metallic
bonding. The yield achieved in wafer to wafer process is generally below 85% due to Known
Good Die (KGD) issues and is thus observed to be cost prohibitive. In direct bonding, the
wafers can be bonded at room temperature. This, in turn, helps to eliminate the problem of
misalignment, which arises due to thermal expansion of one wafer relative to the other at
the time of bond reaction. With respect to process realization techniques, it is believed
that wafer to wafer and via middle processes will become the preferred standard for volume
production of 3D ICs mainly due to the reduced cost of the end-product. On the other hand,
via last approach can be performed with the currently available infrastructure and hence
they are expected to open the path to better market adoption for 3D integration.
Amongst the various end-products for 3D ICs and TSV interconnects, memories are
observed to be the most potential product market with a market share of approximately 40%.
This is followed by sensors and in particular, image sensors. Consumer electronics
application sector is observed to hold the largest share in 3D ICs and TSV interconnects
[http://www.marketsandmarkets.com/Market-Reports/3D-IC-Chip-and-TSV-Interconnect-Market-117.html [http://www.marketsandmarkets.com ]
] with high demand for it in a number of
end-products such as smartphones, tablet PCs, e-readers, laptops, and more.
The global 3D IC market
is expected to grow from $2.21 billion in 2009 to $6.55 billion in 2016 at a CAGR
of 16.9% from 2011 to 2016. Asian region is observed to have the highest growth rate. This
is mainly attributed to the presence of a huge number of companies such as Taiwan
Semiconductor Manufacturing Company Limited (Taiwan), Samsung (South Korea), United
Microelectronics Corporation (Taiwan), and more who contribute to different aspects of 3D
IC manufacturing and thus help to address the challenges associated with its manufacture
in a cost effective manner.
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