MRAM Technologies Boast Higher Densities and Less Power Consumption, Stepping Stone to Next Gen STT-MRAM Scalability and Commercialization
FARMINGTON, Conn., Jan. 2, 2013 /PRNewswire-iReach/ — The global market for embedded and standalone non-volatile RAM is poised for explosive growth in the next few years. Magnetoresistive random-access memory (MRAM) and other non-charge storage-based memories including FeRAM continue to outperform charge-based semiconductor storage technologies such as SRAM, DRAM, NOR flash and NAND; but one challenge remains at the forefront: scalability and commercialization. Recent announcements, such as Toshiba’s new STT-MRAM prototype, mark a shift in MRAM as in-plane technology is replaced by perpendicularly magnetization methods. The latter uses significantly less current and is capable of functioning on smaller transistor sizes.
Perpendicular magnetization has also resolved a major dilemma manufacturers faced previously: making a tradeoff between SRAM-like performance and lower power draw. As next generation STT-MRAM come to light, manufacturers should look forward to the promise of a scalable path with potential to broaden appeal for these new memory elements in mainstream consumer applications. Research and development is key to accelerating this movement and Global Information (GII) provides the latest market research reports covering the global MRAM technology and memory markets from our premium research partner Forward Insights.
A Magnetic Moment: Prospects for MRAM Technology, Markets and Applications
The new report offers an independent view of the opportunities and challenges presented by MRAM technology and its potential as one of the leading contenders in the emerging memory space. Highlights from the report include: MRAM, MTJ in non-volatile logic, MRAM fabrication, memory comparison, MRAM status by major company, embedded nvRAM market forecasts, and requirements for successful eMRAM market entry.
Companies covered in this report include: Aeroflex, Avanlanche Technology, Crocus Technology, Everspin Technologies, Freescale Semiconductor, Hitachi, Honeywell International, IBM, Infineon Technologies AG, Intel, Magsil, Micromem Technologies, Micron, NEC, NVE, Qualcomm, Renesas, Samsung, Spingate, SK Hynic Semiconductor, SPINTEC, ST Microelectronics, Toshiba, Tower Semiconductor, and more.
An Executive Summary for this report and free sample pages from the full document are available at http://www.giiresearch.com/report/foin257781-magnetic-moment-prospects-mram-technology-markets.html
NAND Insights Q4/12 – Moving into the Black
Production cuts and inventory management, and the release of new mobile devices for the seasonal holiday demand, has resulted in a jump in NAND prices ensuring a profitable fourth quarter for all NAND flash suppliers.
Key topics covered in this report include, NAND flash forecast, wafer capacity, vendor status, technology mix and product mix.
An Executive Summary for this report and free sample pages from the full document are available at http://www.giiresearch.com/report/foin257240-nand-insights-12-moving-into-black.html
The NOR flash memory market is shrinking as parallel NOR flash memory is squeezed by lower cost serial flash at the lower density range and SLC NAND flash memory at higher density points. As a consequence, NOR flash manufacturers are looking to grow by actively expanding their product portfolios to include low density (<16Gb) SLC NAND flash memory.
This report examines the demand for low density SLC NAND flash memory in the mobile, consumer and industrial space.
An Executive Summary for this report and free sample pages from the full document are available at http://www.giiresearch.com/report/foin204410-low-density-slc-nand-flash-memory-embedded.html
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