November 4, 2008
Innovative Silicon’s CEO, Mark-Eric Jones to Present at European Tech Tour Semiconductor Summit 2008
Innovative Silicon, Inc. (ISi), developer of the Z-RAM(R) zero-capacitor floating body memory technology, today announced that Mark-Eric Jones, president and CEO, is speaking at the European Tech Tour Semiconductor Summit 2008, in Montreux, Switzerland at 2:00 p.m. on November 5th. Jones and 29 other executives were selected from an initial list of 270, to give presentations on subjects including: media convergence, wireless ubiquity and new technologies.
A 20-person selection committee, encompassing experienced semiconductor investors and professionals across Europe, chose the speakers. The presentations will be given to an international delegation of influential investors, technology industry leaders, service providers and academics. For information on the European Tech Tour Summit see http://www.techtour.com/sve2008/index.php.
The European Tech Tour Association (ETT) was founded by Sven Lingjaerde in Switzerland in 1998 and has successfully organized 28 Tech Tours across Europe and Israel, Russia and India, since its inception ten years ago. The independent organization, composed of key contributors to the high-technology industry, has in this time satisfied the growing interest of the European investment community by visiting emerging technology companies in various European regions.
Focused on the global expansion of emerging companies with a high index of growth, the European Tech Tour Association's main objective is to provide independent leading platforms designed to identify and support the emerging companies with the necessary potential to impact in the technological global scenario. The association recognizes that the European continued prosperity lies in its ability to transform today's innovative projects into tomorrow's global technology leaders. For further information, please go to www.techtour.com.
About Innovative Silicon
Innovative Silicon, Inc. (ISi) is the inventor and licensor of the Z-RAM(R) ultra-dense memory technology for stand-alone DRAM and embedded memory applications. Z-RAM is the world's lowest-cost semiconductor memory technology - simpler to manufacture than DRAM, and a fraction the size of SRAM. ISi and the Z-RAM technology have received numerous industry awards, including the World Economic Forum's selection of ISi as a 2008 Technology Pioneer, and IEEE Spectrum Magazine's selection of Z-RAM as the 2007 "Emerging Technology Most Likely to Succeed." Z-RAM is a "Zero Capacitor," true single-transistor floating body memory that eliminates the complex capacitor found in today's DRAM technologies - a fundamental roadblock to Moore's Law of scaling. Z-RAM provides semiconductor manufacturers a solution for nanoscale manufacturing processes that can dramatically lower semiconductor costs. The Z-RAM memory technology has been licensed by Hynix Semiconductor for use in its DRAM chips, and by AMD for use in microprocessors. Since 2003, the company has closed three funding rounds totaling $47 million, received over 30 patents on the technology, developed test chips in multiple technologies from 90nm to 32nm, and has established global R&D, engineering and support centers in Europe, Asia and North America. For more information see www.z-ram.com.
Z-RAM is a registered trademark of Innovative Silicon, Inc. All other trademarks and registered trademarks are the property of their respective owners.