IBM Technology Alliance Announces Availability of Advanced 28-Nanometer, Low-Power Semiconductor Technology
IBM, Chartered, GLOBALFOUNDRIES, Infineon, Samsung and STMicroelectronics Expand Technology Agreements
The low-power, 28nm technology platform can provide power-performance and time-to-market advantages for producers of a broad range of power-sensitive mobile and consumer electronics applications, including the fast-growing mobile Internet device market segment. The favorable leakage characteristics of the HKMG technology result in optimized battery life for the next generation of mobile products.
This announcement represents an extension of existing joint development agreements, and further progression in the technology offerings of the alliance partners, building on the success of earlier joint development work in 32nm HKMG technology.
A 28nm low-power technology evaluation kit was previously made available in
Already working with clients on 32nm low-power technology, the alliance has gained valuable experience in the implementation of HKMG technology, and is offering a migration path from 32nm to 28nm technology. Clients can begin their designs today in leadership 32nm HKMG technology and then transition to 28nm technology for density and power advantages, without the need for a major redesign. By assuring a path from 32nm to 28nm technology, this migration methodology offers clients lower risk, reduced cost and faster time-to-market.
“Through this collaboration, IBM and its alliance partners are helping to accelerate development of next-generation technology to achieve high-performance, energy-efficient chips at the 28nm process level, maintaining our focus on technology leadership for our clients and partners,” said
Preliminary results working with early access clients and partners indicate that the 28nm technology platform can provide a 40 percent performance improvement and a more than 20 percent reduction in power — all in a chip that is half the size — compared with 45nm technology. The high-k metal gate implementation allows one of the industry’s smallest SRAM cells at 0.120 square microns, with low minimum voltage operation and competitive performance, leakage and stability.
These improvements enable microchip designs with outstanding performance, smaller feature sizes and low standby power, contributing to faster processing speed and longer battery life in next-generation mobile Internet devices and other systems.
“This statement of commitment to 28nm low-power technology by the IBM Joint Development Alliance is an important progression from 32nm high-k metal gate technology,” said
“28nm low-power technology will provide a significant step function in terms of performance, consumption and density versus the 40nm node, enabling competitive solutions for consumer and automotive segments served by STMicroelectronics,” said
“Through industry collaboration and integration of our processor and physical IP with advanced manufacturing technologies, ARM and the Common Platform alliance continue to drive the adoption of next-generation consumer electronics,” said
Unlike poly/SiON, the HKMG low-power technology breaks down the historical barrier of scaling, allowing significant power and performance advantage without the need for complex processes, thereby lowering clients’ total development cost.
Today’s announcement marks the latest development achievement from this alliance of semiconductor manufacturing, development and technology companies who collaborate to address the product design and advanced process development challenges central to producing a smaller, faster, more cost efficient generation of semiconductors.
Chartered Semiconductor Manufacturing Tiffany Sparks 408-941-1185 email@example.com GLOBALFOUNDRIES Jon Carvill 512-602-8162 firstname.lastname@example.org Infineon Technologies Mitchel Ahiers 408-503-2791 Mitch.Ahiers@infineon.com IBM Jeff Couture 802-769-2483 email@example.com Samsung Electronics Lisa Warren-Plungy 408-544-5377 firstname.lastname@example.org STMicroelectronics Michael Markowitz 781-449-0354 email@example.com
SOURCE IBM Corporation