Quantcast

Toshiba Expands C-Band GaAs FETs Lineup With Three Power Amplifiers Optimized For Power Added Efficiency

June 9, 2009

High Power Added Efficiency Lineup Includes GaAs Amplifiers with Higher Gain for Microwave Radios and SSPAs

IRVINE, Calif., June 9 /PRNewswire/ – Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with three new devices optimized for power efficiency. The Power Added Efficiency enhanced GaAs FETs are targeted for microwave radios and solid-state power amplifiers (SSPAs) and will be exhibited in TAEC’s booth, #623, at the 2009 IEEE MTT-S International Microwave Symposium, which will be held June 7 through 12 in Boston, Massachusetts.

Two new Extended C-Band GaAs FETs for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM5867-8UL and the TIM5867-30UL, operate in the 5.85 to 6.75 GHz(1) range. The TIM5867-8UL has an output power at 1dB gain compression point of 8W, or 39.5dBm (typ.), linear gain of 10.0dB (typ.) and power added efficiency of 36 percent. The TIM5867-30UL features an output power at 1dB gain compression point of 30W, or 45.0dBm (typ.), linear gain of 10.0dB (typ.), and power efficiency of 41 percent.

For satellite solid-state power amplifier (SSPA) applications, Toshiba has added a 60W C-band power amplifier that operates in the 7.7 to 8.5 GHz range, with higher gain. The TIM7785-60UL has an output power at one-dB gain compression point of 48dBm (typ.), gain of 7.5dB (typ.) and power efficiency of 36 percent.

“Toshiba has a broad power GaAs FET product family to support extended C-band, but many customers have asked us to upgrade the family using the latest process technology. High gain and high power added efficiency features will help designers build energy-efficient microwave radios,” said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC’s Discrete Business Unit. “One of the design challenges with 7 to 8GHz SSPAs has traditionally been that they sometimes have a lower device gain compared to 5 to 6GHz parts, so designers could not use the same lineup for 7 to 8GHz power amplifiers as they do for lower frequency amplifiers. The TIM7785-60UL, 60W Power GaAs FET offers 7.5dB of G1dB, which is a 1.5dB improvement over Toshiba’s previous 60W product in that band. The improved gain will help microwave designers reduce the number of parts in their overall system.”

Technical Specifications

    Product                   TIM5867-8UL     TIM5867-30UL      TIM7785-60UL
     Characteristics

    Frequency                5.85-6.75GHz     5.85-6.75GHz       7.7-8.5GHz

    Band                       Extended         Extended           C-Band
                                C-Band           C-Band

    Output Power,
     P1dB(typ.)                   8W               30W               60W

    Gain, G1dB(typ.)            10.0dB           10.0dB             7.5dB

    Power Efficiency              36%              41%               36%

Pricing and Availability

Samples of the Toshiba Power Added Efficiency GaAs FET family are available now. For pricing, please contact your Toshiba representative.

Toshiba Microwave Product Overview

Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company’s line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution systems (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial point-to-point communications, radar systems and medical uses.

*About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today’s leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s third largest semiconductor manufacturer (Gartner, 2008 WW Semiconductor Revenue, April 2009). For additional company and product information, please visit http://www.toshiba.com/taec/.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s “Handling Guide for Semiconductor Devices,” or “Toshiba Semiconductor Reliability Handbook.” This information is available at www.chips.toshiba.com, or from your TAEC representative.

(1) For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.

SOURCE Toshiba America Electronic Components, Inc.


Source: newswire



comments powered by Disqus