Toshiba Adds Small Signal P-Channel MOSFETs for Load Switching in Mobile Handsets and Portable Electronics

IRVINE, Calif., Nov. 4 /PRNewswire/ — Toshiba America Electronic Components, Inc., (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, has expanded its lineup of P-channel power MOSFETs for load switching with a next-generation selection of low voltage, 1.5V operation devices with lower On-Resistance (R(DS)(ON)) for applications with current ranging from 1.0A to 5.0A. Typical applications are mobile handsets, digital cameras, portable audio players and other portable electronic devices.

The new lineup includes five high speed switching power MOSFETs with -20V drain source voltage (V(DSS)) to provide designers with a choice of On-Resistance (R(DS)(ON)), input capacitance, and packaging. The family is offered three different small thin packages: 3-pin TSM (2.9 x 2.8 x 0.7mm), 6-pin UF6 (2.0 x 2.1 x 0.7mm), and 3-pin UFM (2.0 x 2.1 x 0.7mm).

“As system power supplies for mobile handset components such as baseband ICs move toward lower voltage and power, there is an increasing need for low R(DS)(ON) MOSFETs,” said Talayeh Saderi, business development engineer, RF and small signal devices, for TAEC.

New devices in TSM packages include the SSM3J307T, which features R(DS)(ON) of 83mohm (max.) at V(GS) = -1.5V or 40mohm at -2.5V, with input capacitance of 1170 pF(1); and the SSM3J321T with R(DS)(ON) of 137mohm (max.) at V(GS) = -1.5V and 62mohm at -2.5V, with input capacitance of 640 pF(1). For comparison, the previous generation SSM3J13T, a -12V(DSS) device, features R(DS)(ON) of 95mohm (max.) at V(GS) = -2.5V, with input capacitance of 890pF(1).

Another new MOSFET in UF6 packaging, the SSM6J409TU, features R(DS)(ON) of 72.3 mohm (max.) at V(GS) = -1.5V and 30.2 mohm at -2.5V, with input capacitance of 1100 pF(1). Its predecessor, the SSM6J51TU, features R(DS)(ON) of 150mohm (max.) at V(GS) = -1.5V, and input capacitance of 1700 pF(1).

Two new MOSFETs in UFM packaging are the SSM3J130TU, a -20V(DSS) device with R(DS)(ON) of 63.2 mohm (max.) at V(GS) = -1.5V and 41.1 mohm at -2.5V, with input capacitance of 1800 pF(1) and the SSM3J129TU, a -20V(DSS) device with R(DS)(ON) of 137mohm (max.) at V(GS) = -1.5V and 80 mohm at -2.5V, with input capacitance of 640 pF(1). For comparison, the previous generation SSM3J120TU features R(DS)(ON) of 140mohm (max.) at V(GS) = -1.5V and input capacitance of 1484 pF(1).

    Electrical and Optical Characteristics (Ta -25 degrees C, I(F)=20mA)

                                               R(DS)(ON) max(mohm)
                                         ------------------------------
                           V(DSS)  I(D)  V(GS)=  V(GS)=  V(GS)=  V(GS)=
    Part number  Polarity   (V)    (A)   -1.5V   -1.8V   -2.5V   -4.5V
    20V V(DSS)
    SSM3J307T   P-channel    -20    -5      83      56     40       31
    SSM3J321T   P-channel    -20  -5.2     137      88     62       46
    SSM6J409TU  P-channel    -20  -9.5    72.3    46.3   30.2     22.1
    SSM3J130TU  P-channel    -20  -4.4    63.2    41.1     31     25.8
    SSM3J129TU  P-channel    -20  -4.6     137      88     62       46

                     Input
                  Capacitance
    Part number     (pF)(1)    Process  Package
    20V V(DSS)
    SSM3J307T         1170     U-MOS V    TSM
    SSM3J321T          640     U-MOS V    TSM
    SSM6J409TU        1100     U-MOS V    UF6
    SSM3J130TU        1800     U-MOS VI   UFM
    SSM3J129TU         640     U-MOS V    UFM

Pricing and Availability

Samples of all the devices described above are available now, and mass production is ramping. Prices begin at $0.12, in sample quantities.

Toshiba’s Discrete Products

Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: “2008 Worldwide Semiconductor Market Share Report,” Gartner, released April 2009). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, photocouplers, Toslinks(TM), LEDs, small signal diodes and transistors. The company’s discrete devices are designed to meet the growing demand for high-performance and lower voltages in today’s wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.

*About TAEC and Toshiba Corp.

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today’s leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s third largest semiconductor manufacturer (Gartner, 2008 WW Semiconductor Market Share Report, April 2009). For additional company and product information, please visit http://www.toshiba.com/taec/.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s “Handling Guide for Semiconductor Devices,” or “Toshiba Semiconductor Reliability Handbook.” This information is available at www.chips.toshiba.com, or from your TAEC representative.

(1)at V(DS) = -10V, V(GS) = 0V, f = 1MHz

SOURCE Toshiba America Electronic Components, Inc.