New Higher Power 18W and 30W GaAs FETs Extend Toshiba Ku-Band Power Amplifier Lineup for Microwave Radios
ANAHEIM, Calif., May 26 /PRNewswire/ — Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of their Ku-Band gallium arsenide field effect transistor (GaAs FETs) lineup with two higher output power devices rated for 18 and 30 watts (W). The new power amplifier GaAs FETs will be shown in TAEC’s booth, #813, at the 2010 IEEE MTT-S International Microwave Symposium, which will be held May 25 through May 27 in Anaheim, California.
The new GaAs FETs, TIM1213-18L and TIM1213-30L, operate in the 12.7 to 13.2 GHz(1) range, and are targeted for use in microwave radios for microwave links and satellite communications. Other current Toshiba GaAs FETs in this frequency range feature 2W, 4W, 8W, 10W and 15W power output ratings.
The TIM1213-18L has output power at 1dB gain compression point (P1dB) of 42.5dBm (typ.), power gain at 1dB gain compression point (G1dB) of 6.0dB (typ.) and power efficiency of 28 percent. The TIM1213-30L features P1dB of 45.0dBm (typ.), G1dB of 5.5dB (typ.) and power added efficiency of 23 percent.
“Continuing our long tradition of developing higher power amplifiers as technology advances, Toshiba is expanding our Ku-Band product family with these new devices to enable our customers to design more powerful and linear microwave radios with fewer components,” said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC’s Discrete Business Unit.
Product Characteristics TIM1213-18L TIM1213-30L Frequency 12.7-13.2GHz 12.7-13.2GHz Band Ku-Band Ku-Band Output Power, P(1dB)(typ.) 42.5dBm 45.0dBm Power Gain, G(1dB)(typ.) 6.0dB 5.5dB Power Added Efficiency 28% 23%
Pricing and Availability
Samples of the new Ku-Band GaAs FETs, TIM1213-18L and TIM1213-30L, are available now. For pricing, please contact your Toshiba representative.
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company’s line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include FWA/BWA systems such as WiMAX, point-to-point (PTP) or point-to-multi-point (PTMP) terrestrial microwave radio links, satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems and other industrial uses. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial PTP or PTMP communications, radar systems and other industrial uses.
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today’s leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s third largest semiconductor manufacturer (Gartner, 2009 WW Semiconductor Revenue, Dec. 2009). For additional company and product information, please visit http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s “Handling Guide for Semiconductor Devices,” or “Toshiba Semiconductor Reliability Handbook.” This information is available at www.chips.toshiba.com, or from your TAEC representative.
(1) For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
Photos available for download at http://www.toshiba.com/taec/news/press_releases/2010/mwrf_10_595.jsp
SOURCE Toshiba America Electronic Components, Inc.