Macronix Develops New 3D NAND Flash Technology
Ltd. (TSE: 2337), a leading provider of non-volatile memory semiconductor
solutions, today announced its research results that provide a successful path
to the most scalable and most efficient 3D NAND Flash using its patented BE-
SONOS (barrier engineering) charge-trapping technology and 3D decoding
architecture. Because of the important breakthrough, this Macronix’s work
addressing 3D NAND Flash has been chosen as one of the 8 highlight papers by
the 2010 Symposium on VLSI Technology.
In this paper, Macronix reports the fabrication and demonstration of an
8-layer, 75nm half-pitch, 3D VG (Vertical Gate) NAND Flash using a
junction-free BE-SONOS device. The BE-SONOS charge-trapping device provides
both high reliability and simple structure suitable for 3D. At an equivalent
0.0014 (um) 2 cell size (near world record), Macronix’s 3D VG NAND has shown
no Z-directional interference, large read current, and large program window
(7V) for MLC (Multi-level Cell) operation.
“Traditional NAND Flash will be facing technology barrier when it scales
to below 2Xnm node,” said
three-dimensional memory cell array structure has been proposed to be the most
promising candidate for NAND Flash to shrink to below 1Xnm. Macronix’s 3D
memory research results based on our own BE-SONOS technology have set a new
milestone for next generation NAND Flash to meet high density capacity
The 3D cell technology stacks memory cells in three dimensions, thus
provides an important solution to making terabit NAND Flash possible. Using 3D
stacking, NAND Flash may achieve higher data storage capacity and effectively
lower fabrication cost without relying on advances in lithography technology.
Therefore, some memory manufacturers have invested in 3D research recently.
Several 3D NAND Flash structures have been proposed, such as P-BiCS
(Pipe-shaped Bit Cost Scalable), TCAT (Terabit Cell Array Transistor), VSAT
(Vertical Stacked Array Transistor) and VG (Vertical Gate). However, in a 3D
structure interference (cross talk) occurs not only between neighboring cells
in the same plane but also between vertical neighbors in adjacent planes. This
has become a new challenge in addition to the conventional Moore’s law scaling
Through detailed analyses on scalability, reading current (which
determines read speed performance) and cross talk, Macronix’s work has chosen
the VG architecture, believing it is the best approach. Simulation shows this
structure could be scaled to 25nm node in a 3D array, providing density far
beyond conventional 2D NAND Flash.
Macronix has invested in 3D memory study for a number of years already. In
2006, Macronix presented its first 3D NAND Flash technical paper in the
Symposium on VLSI Technology in
work on 3D NAND Flash, concomitant with another 3D NAND Flash work from
another leading edge company in the same conference). Since then, Macronix has
announced its research work in 3D memories continuously in VLSI Symposium,
IEDM (IEEE International Electron Devices Meeting) and IMW (IEEE International
Memory Workshop) and has become one of the world’s leading researchers in 3D
Two technical papers from Macronix have been presented in the 2010
Symposium on VLSI Technology held in
highlight paper addressing 3D NAND Flash (Paper 12.4 “A Highly Scalable
8-Layer 3D Vertical-Gate (VG) TFT NAND Flash Using Junction-Free Buried
Channel BE-SONOS Device,”
technology (Paer 8.4 “A Novel TiTe Buffered Cu-GeSbTe/SiO2 Electrochemical
Resistive Memory (ReRAM)”, Y.-Y. Lin, et al.) has also been chosen.
The Symposium on VLSI Technology was established in 1982 and it has since
become the world’s premier forum for the presentation of advances in the VLSI
(Very-large-scale integration) technology. Usually there are about 90 research
papers selected from over 200 submissions for the annual discussion.
Macronix’s research is the only work from
this year. In 2009, another paper from Macronix (“A Novel Buried-Channel
FinFET BE-SONOS NAND Flash with Improved Memory Window and Cycling Endurance”)
was also highlighted by VLSI Symposium.
Macronix’s research works in advanced non-volatile memory technology has
attracted much international attention. Several other technical papers have
also been highlighted by international conferences in recent years are shown
-- High-Speed Multilevel Resistive RAM Using RTO WOx (2009, Solid State Devices and Materials Symposium, SSDM) -- The Bridge Structure for Advanced Phase Change Memory Investigations (2008, European Symposium on Phase Change and Ovonic Science, EPCOS) -- Ultra-Thin Phase-Change Bridge Memory Device Using GeSb (2006, IEDM). This joint research paper with IBM & Qimonda (Macronix as first author) was selected as a very significant paper by IEDM and was invited to present at The International Solid-State Circuits Conference (ISSCC) in 2007. -- Scaling Properties of Phase Change Nanostructures and Thin Films (2006 EPCOS).
About Macronix International Co., Ltd.
Founded in 1989, Macronix International Co., Ltd. (TSE: 2337.TT) is a
leading provider of innovative Non-Volatile Memory (NVM) solutions. Macronix
is the largest worldwide manufacturer of ROM products, and also provides a
wide range of Parallel and Serial NOR Flash products across various densities.
These products are used in vast range of consumer, computing, communications &
networking, and industrial applications.
For more information, please visit the Company web site at http://www.macronix.com . Media Contacts: Headquarters (Taiwan) Michelle Chang Department Manager Corporate Communication Office Macronix International Co., LTD. Tel: +886-3-578-6688 ext. 71233 Fax: +886-3-666-3169 Email: firstname.lastname@example.org Americas Salman Rashid Senior Marketing Director Macronix America, Inc. Tel: +1-408-941-6264 Fax: +1-408-893-1777 Email: email@example.com Manish Gulati Senior Marketing Manager Macronix America, Inc. Tel: +1-408-941-6275 Fax: +1-408-893-1777 Email: firstname.lastname@example.org Japan Macronix Asia Limited. Harrison Tu General Manager Tel: +81-44-246-9100 Fax: +81-44-246-9105 Email: email@example.com
SOURCE Macronix International Co., Ltd.