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Soitec Announces Industrial Readiness of Complete Fully Depleted (FD) Platform – Key to Higher Performance for Mobile Consumer Devices

July 13, 2010

SEMICON WEST TRADE SHOW, SAN FRANCISCO, July 13, 2010
/PRNewswire-FirstCall/ — The Soitec Group (Euronext Paris), the world’s
leading supplier of engineered substrates for the microelectronics industry,
announced today that the company is ready with the Ultra-Thin Buried Oxide
(UTBOX) extension to its Ultra-Thin (UT) silicon-on-insulator (SOI) platform,
thereby providing a robust substrate solution for chip designers tackling the
performance, power and density challenges of mobile consumer devices. Fully
Depleted (FD) planar body transistors are now recognized as the right path on
the CMOS roadmap for the 22nm generation and beyond. With FD planar
transistor technology on UTBOX wafers, chip designers can enhance their usual
design flows and techniques. High-volume capacity is available for the 22nm
node at Soitec’s manufacturing sites in France and Singapore.

“Soitec is ready with the UTBOX wafers for planar FD architectures: the
infrastructure, the process maturity, yield and the capacity are all in place
to support demand,” said Soitec president and chairman, Andre-Jacques
Auberton-Herve. “Industry leaders confirm that FD planar technology is the
right choice for mobile consumer products, which need higher performance
without compromising power. Our UTBOX offering shows the critical role our
materials play as the starting point for energy-efficient, state-of-the-art
electronics.”

With an ultra-thin, insulating buried oxide layer, system-on-chip (SOC)
designers and system architects can leverage standard techniques for
attaining lower power and higher performance as needed by the target
applications. The UTBOX option further complements the existing advantages of
planar FD technology, which solves transistor variability issues, delivers
the best device electrostatics, and enables SRAM to operate at lower supply
voltages (Vdd). It is an evolutionary and highly manufacturable technology
that offers simple processes and continuity of design tools, leading to a
very cost-effective solution.

For FD planar to live up to its tremendous promise, the starting wafers
must meet very stringent top silicon uniformity specifications. With
ultra-thin top silicon thickness variation within a +/- 0.5nm maximum range,
and a buried oxide layer as thin as 10nm, these wafers are in full compliance
with customer requirements.

“FD SOI is the right technology at the right time. As the challenges to
control bulk leakages become very expensive and unreliable, FD SOI offers a
simple solution. Additionally, the fact that FD SOI is a planar and scalable
technology with no history effects provides a seamless design transition.
This is a powerful combination,” said Horacio Mendez, executive director of
the SOI Industry Consortium.

Soitec will exhibit in booth # 1333 in Moscone Convention Center’s South
Hall at the Semicon West trade show, July 13-15 in San Francisco.

About the Soitec Group:

The Soitec Group is the world’s leading innovator and provider of the
engineered substrate solutions that serve as the foundation for today’s most
advanced microelectronic products. The group leverages its proprietary Smart
Cut(TM) technology to engineer new substrate solutions, such as
silicon-on-insulator (SOI) wafers, which became the first high-volume
application for this proprietary technology. Since then, SOI has emerged as
the material platform of the future, enabling the production of higher
performing, faster chips that consume less power.

Today, Soitec produces more than 80 percent of the world’s SOI wafers.
Headquartered in Bernin, France, with two high-volume fabs on-site, Soitec
has offices throughout the United States, Japan and Taiwan, and a new
production site in Singapore.

Three other divisions, Picogiga International, Tracit Technologies and
Concentrix Solar, complete the Soitec Group. Picogiga delivers advanced
substrates solutions, including III-V epiwafers and gallium nitride (GaN)
wafers, to the compound material world for the manufacture of high-frequency
electronics and other optoelectronic devices. Tracit, on the other hand,
provides thin-film layer transfer technologies used to manufacture advanced
substrates for power ICs and Microsystems, as well as generic circuit
transfer technology , Smart Stacking for applications such as image sensors
and 3D-integration. In December 2009, Soitec acquired 80% of Concentrix
Solar, the leading provider of concentrated photovoltaic (CPV) solar systems
for the industrial production of energy. With this acquisition, Soitec is
entering the fast-growing solar industry; capturing value through the system
level. Shares of the Soitec Group are listed on Euronext Paris. For more
information, visit http://www.soitec.com.

Soitec, Smart Cut, Smart Stacking and UNIBOND are trademarks of S.O.I.TEC
Silicon On Insulator Technologies.

    International Media Contact
    Camille Darnaud-Dufour
    +33(0)6-79-49-51-43
    camille.darnaud-dufour@soitec.com

    Investor Relations Contact
    Olivier Brice
    +33(0)4-76-92-93-80
    olivier.brice@soitec.fr

    French Media Contact
    Muriel Martin, H&B Communication
    +33(0)1-58-18-32-44
    m.martin@hbcommunication.fr

SOURCE Soitec


Source: newswire



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