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Sharp Introduces 1.8 V 128 Mbit Flash Memory With High Throughput For Next Generation Mobile Applications

Posted on: Tuesday, 1 June 2004, 06:00 CDT

Memory device increases image-processing speed at lower voltages for 3-D images, camera phone, media player markets

Sharp Corporation's IC Group announced today that it has developed a high-speed, low voltage, high density 128 Mbit NOR Flash memory that features the highest throughput available to date. This high-speed device is optimal for camera-enabled mobile phones, as well as emerging media player and medical applications. This new memory device is part of Sharp's total system solution, and is easily integrated with other Sharp-developed components including LCDs, optoelectronics, imagers, and other IC components such as microcontrollers and System-on-Chip devices.

With the spread of third generation mobile phones that incorporate megapixel CCD cameras, demand to move data more quickly through a device is increasing. Previously, data transfer rates have experienced a bottleneck that has prevented applications from making full use of the CPU (base band chip), for such things as video clip play back or operation of high-speed applications.

"As a global leader in Flash memory technology, Sharp has anticipated the evolution of mobile phones to include media-rich applications," said Mark Hampson, Senior Product Marketing Manager at Sharp Microelectronics of the Americas. "We have developed this higher density, lower power Flash device to support the design requirements for next generation applications, including 3D- and video mail-enabled camera phones and media player devices."

This newly-developed Flash memory has achieved a fast 108 MHz data transfer rate in synchronous burst mode, making possible a smooth 30 frames per second movie playback at CIF size (352 x 288 pixels). Additionally, operation using a single 1.8 V power supply contributes toward lower power consumption for the product.

Specifications -0- *T Model LH28F128BN Memory Capacity 128 Mbit Bit Configuration x16 Power Supply Voltage 1.7 - 1.9 V Synchronous Burst Mode: 108 MHz /80 MHz (1) Access Time Normal access: 60 ns/70 ns Page mode access: 20 ns/25 ns Readout Current 15 mA (5 MHz asynchronous) Package Size 8 mm x 11mm FBGA (CSP) for both single part and combination memory *T

(1) Item supporting 80 MHz operation in synchronous burst mode has also been developed.

Availability

Sharp is currently shipping samples of the LH28F128BN, and will start quantity production in June 2004.

About Sharp Microelectronics of the Americas

Sharp Microelectronics of the Americas, Camas, Wash., is a U.S.-based company and a division of Sharp Electronics Corporation, which is a subsidiary of Sharp Corporation, Osaka, Japan. Sharp is a worldwide developer of core digital technologies that are playing an integral role in shaping the next generation of electronic products for consumer and business needs. Sharp Microelectronics of the Americas offers breakthrough memory, LCD, optoelectronics, CCD, RF/IR, microcomputer and System-on-Chip components, along with packaging and integration skills that help design engineers throughout North and South America bring their ambitious ideas to market. Sharp Microelectronics of the Americas is dedicated to improving people's lives through the use of advanced technology and a commitment to innovation, quality, value, and design. For more information, call 1-800-642-0261 or visit www.sharpsma.com.

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