Latest Applied Materials Stories
Achieves high output power of 2.5kW in power supply units for servers Yokohama, Japan, Nov 8, 2012 - (JCN Newswire) - Fujitsu Semiconductor Limited today announced that it successfully achieved high output power of 2.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Fujitsu Semiconductor aims to start volume production of the GaN power devices in the second half of 2013. These devices will enable...
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