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Last updated on April 18, 2014 at 1:21 EDT

Latest Avalanche breakdown Stories

Terahertz Pulse Increases Electron Density 1,000-fold
2011-12-20 09:12:48

Findings point to advances in transistor and solar cell development Researchers at Kyoto University have announced a breakthrough with broad implications for semiconductor-based devices. The findings, announced in the December 20 issue of the journal Nature Communications, may lead to the development of ultra-high-speed transistors and high-efficiency photovoltaic cells. Working with standard semiconductor material (gallium arsenide, GaAs), the team observed that exposing the sample to...

2009-05-11 05:00:00

Power MOSFETs increase breakdown voltage and avalanche capability, and cut on-resistance by 30 percent over previous generation GENEVA, May 11 /PRNewswire-FirstCall/ -- STMicroelectronics (NYSE: STM), a world leader in power semiconductors, has introduced a new family of power MOSFETs combining higher voltage capability, greater ruggedness, and lower losses than previous devices, which are well suited for use in high-efficiency power supplies for products such as LCD monitors, televisions...

2009-02-10 15:04:41

U.S. scientists say they've been able to increase the current-carrying capacity of carbon nanotubes to a level previously thought impossible to achieve. University of Illinois researchers said they used an avalanche process that carries more electrons down more paths, similar to the way a multilane highway carries more traffic than a one-lane road. Single-wall carbon nanotubes are already known to carry current densities up to 100 times higher than the best metals like copper, said Professor...