Latest Avalanche breakdown Stories
Researchers at Kyoto University have announced a breakthrough with broad implications for semiconductor-based devices. The findings may lead to the development of ultra-high-speed transistors and high-efficiency photovoltaic cells.
Power MOSFETs increase breakdown voltage and avalanche capability, and cut on-resistance by 30 percent over previous generation GENEVA, May 11 /PRNewswire-FirstCall/ -- STMicroelectronics (NYSE: STM), a world leader in power semiconductors, has introduced a new family of power MOSFETs combining higher voltage capability, greater ruggedness, and lower losses than previous devices, which are well suited for use in high-efficiency power supplies for products such as LCD monitors, televisions...
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