Latest Compound semiconductors Stories

University of Illinois When a team of University of Illinois engineers set out to grow nanowires of a compound semiconductor on top of a sheet of graphene, they did not expect to discover a new paradigm of epitaxy. The self-assembled wires have a core of one composition and an outer layer of another, a desired trait for many advanced electronics applications. Led by professor Xiuling Li, in collaboration with professors Eric Pop and Joseph Lyding, all professors of electrical and...

University of California, Davis, researchers for the first time have looked inside gallium manganese arsenide, a type of material known as a "dilute magnetic semiconductor" that could open up an entirely new class of faster, smaller devices based on an emerging field known as “spintronics.” Materials of this type might be used to read and write digital information not by using the electron’s charge, as is the case with today’s electronic devices, but by using its "spin."...

Spintronic technology, in which data is processed on the basis of electron “spin” rather than charge, promises to revolutionize the computing industry with smaller, faster and more energy efficient data storage and processing. Materials drawing a lot of attention for spintronic applications are dilute magnetic semiconductors – normal semiconductors to which a small amount of magnetic atoms is added to make them ferromagnetic. Understanding the source of ferromagnetism in dilute magnetic...

FREMONT, Calif., Aug. 8, 2012 /PRNewswire/ -- Soraa, the world's leading developer of GaN on GaN((TM)) (gallium nitride on gallium nitride) solid-state lighting technology, announced today that it has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on the development of bulk gallium nitride (GaN) substrates. Using GaN as a substrate holds promise for many industries, but has immediate applications for light-emitting diodes (LEDs), which Soraa...

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*), a committed leader that collaborates with technology companies to create breakthrough designs, today announced a Ka-Band High Power gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class. Targeted to SATCOM applications such as high definition...

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the introduction of its new gallium nitride (GaN) hybrid IC (HIC), which is optimized for high gain and power. Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active...

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with the addition of two new devices optimized for power efficiency. The new power added efficiency enhanced GaAs FETs are targeted to microwave radios and block up convertors (BUCs), and will be...

SAXONBURG, Pa., May 31, 2012 /PRNewswire-iReach/ -- II-VI Infrared is continuing to expand its Saxonburg, PA CVD diamond facility. This optical CVD diamond is being used in applications including multispectral laser optics, dielectric windows, and other applications. More recently, the CVD diamond is being used to handle extreme laser powers, including those in EUV lithography. The properties of CVD diamond, such as excellent thermal conductivity, coupled with II-VI Infrared's...

Berkeley Lab Researchers Resolve Controversy Over Gallium Manganese Arsenide that Could Boost Spintronic Performance A long-standing controversy regarding the semiconductor gallium manganese arsenide, one of the most promising materials for spintronic technology, looks to have been resolved. Researchers with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab)in collaboration with scientist from University of Notre Dame have determined the origin of the...

PIoNIR:640, the world’s first scientific-grade camera to utilize a deep-cooled InGaAs (indium gallium arsenide) focal plane array. Applications: nanotube fluorescence imaging to photovoltaic (PV) inspection. Trenton, New Jersey (PRWEB) January 05, 2012 Princeton Instruments is pleased to introduce the PIoNIR:640, the world’s first scientific-grade camera to utilize a deep-cooled InGaAs (indium gallium arsenide) focal plane array. The PIoNIR™ is specifically designed for use in...