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Last updated on April 19, 2014 at 9:20 EDT

Latest Epitaxy Stories

2014-04-03 12:23:52

DUBLIN, April 3, 2014 /PRNewswire/ -- Research and Markets ( http://www.researchandmarkets.com/research/w29grv/gallium_nitride) has announced the addition of the "Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device & by Geography - Forecast & Analysis to 2013 - 2022" [http://www.researchandmarkets.com/research/w29grv/gallium_nitride ] report to their offering. (Logo:...

2014-03-23 23:01:56

RnRMarketResearch.com adds “Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device & by Geography – Forecast & Analysis to 2013 – 2022” to its store. Dallas, Texas (PRWEB) March 23, 2014 The report of GaN device and wafer market identifies the entire market and all its sub-segments through extensively detailed classifications, in terms of revenue, shipments and ASPs. This market report has...

2014-03-13 20:25:52

DUBLIN, Ireland, March 13, 2014 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/bfqmpt/toshiba) has announced the addition of the "Toshiba - TL1F1-LW1 Technology Analysis" [http://www.researchandmarkets.com/research/bfqmpt/toshiba ] report to their offering. (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) The First GaN On Silicon Led By Toshiba On The Market New In This Led: Silicon Substrate, Bonding Without Gold,...

2014-02-06 16:25:24

DUBLIN, February 6, 2014 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/9xxsmv/toshiba) has announced the addition of the "Toshiba - TL1F1-LW1 Full Reverse Costing Report" [http://www.researchandmarkets.com/research/9xxsmv/toshiba ] report to their offering. (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) The First GaN On Silicon Led By Toshiba On The Market New In This Led: Silicon Substrate, Bonding Without...

Researchers Invent ‘Sideways’ Approach To 2-D Hybrid Materials
2014-01-10 14:06:22

Oak Ridge National Laboratory Researchers at the Department of Energy’s Oak Ridge National Laboratory and the University of Tennessee, Knoxville have pioneered a new technique for forming a two-dimensional, single-atom sheet of two different materials with a seamless boundary. The study, published in the journal Science, could enable the use of new types of 2-D hybrid materials in technological applications and fundamental research. By rethinking a traditional method of growing...

2013-10-02 08:33:46

MOCVD and MBE Substrate Production Both Drop in 2012 BOSTON, Oct. 2, 2013 /PRNewswire/ -- Production of GaAs epitaxial substrates decreased in 2012, the result of slow growth in the GaAs device market and increasing use of multi-band GaAs power amplifiers in cellular applications. Strategy Analytics has recently released a spreadsheet model and Forecast and Outlook report from their GaAs and Compound Semiconductor Technologies Service (GaAs) entitled "Markets for Semi-Insulating...

2013-10-01 08:36:34

MIGDAL HAEMEK, Israel, October 1, 2013 /PRNewswire/ -- Jordan Valley Semiconductors [http://www.jordanvalley.com ] Ltd., a leading supplier of X-ray based metrology tools for advanced semiconductor manufacturing lines, today announced that it has received another order for its recently introduced JVX7300LMI scanning X-ray in-line metrology tool for patterned and blanket wafers. The system has been purchased for advanced process development and production ramp-up for 14nm and...

2013-05-29 04:21:19

Potentially an ultimate barrier film for GaN on silicon NEWPORT, England and BRISBANE, Australia, May 29, 2013 /PRNewswire/ -- The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University and industry partner SPTS Technologies, a supplier of advanced wafer processing solutions for the global semiconductor industry and related markets, have announced epitaxial growth of 3C silicon carbide (SiC) films on 300mm silicon wafers. This breakthrough is the result of...

Nanowires Grown On Graphene Have Surprising Structure
2013-04-24 12:04:44

University of Illinois When a team of University of Illinois engineers set out to grow nanowires of a compound semiconductor on top of a sheet of graphene, they did not expect to discover a new paradigm of epitaxy. The self-assembled wires have a core of one composition and an outer layer of another, a desired trait for many advanced electronics applications. Led by professor Xiuling Li, in collaboration with professors Eric Pop and Joseph Lyding, all professors of electrical and...

2013-02-13 04:21:13

MOSCOW and ZELENOGRAD, Russia, February 13, 2013 /PRNewswire/ -- As the global Power Electronics industry is shifting production from 150 to 200 mm substrates, Epiel JSC introduces to the market 200 mm silicon epitaxial wafers for discrete power devices. According to industry analysts Power Electronics is likely to remain one of the most attractive sectors of semiconductor market in the next few years. Energy efficiency is gaining more and more emphasis in areas such as...