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Latest Epitaxy Stories

Controlling Silicon Evaporation Allows Scientists To Boost Graphene Quality
2011-09-23 04:36:17

  Growing graphene Scientists from the Georgia Institute of Technology have for the first time provided details of their "confinement controlled sublimation" technique for growing high-quality layers of epitaxial graphene on silicon carbide wafers. The technique relies on controlling the vapor pressure of gas-phase silicon in the high-temperature furnace used for fabricating the material. The basic principle for growing thin layers of graphene on silicon carbide requires heating...

2011-07-25 15:39:26

In an advance that could open new avenues for solar cells, lasers, metamaterials and more, researchers at the University of Illinois have demonstrated the first optoelectronically active 3-D photonic crystal. "We've discovered a way to change the three-dimensional structure of a well-established semiconductor material to enable new optical properties while maintaining its very attractive electrical properties," said Paul Braun, a professor of materials science and engineering and of chemistry...

2011-06-13 14:25:48

A new generation of high speed, silicon-based information technology has been brought a step closer by researchers in the Department of Electronic and Electrical Engineering at UCL and the London Centre for Nanotechnology. The team's research, published in next week's Nature Photonics journal, provides the first demonstration of an electrically driven, quantum dot laser grown directly on a silicon substrate (Si) with a wavelength (1300-nm) suitable for use in telecommunications. Silicon is...

2011-06-10 13:02:00

YORKTOWN HEIGHTS, N.Y., June 10, 2011 /PRNewswire/ -- Today, IBM (NYSE: IBM) Research scientists announced that they have achieved a milestone in creating a building block for the future of wireless devices. In a paper published yesterday in the magazine Science, IBM researchers announced the first integrated circuit fabricated from wafer-size graphene, and demonstrated a broadband frequency mixer operating at frequencies up to 10 gigahertz (10 billion cycles/second). (Logo:...

2011-05-24 18:29:33

Scientists from the National Physical Laboratory (NPL), in collaboration with Linköping University, Sweden, have shown that regions of graphene of different thickness can be easily identified in ambient conditions using Electrostatic Force Microscopy (EFM). The exciting properties of graphene are usually only applicable to the material that consists of one or two layers of the graphene sheets. Whilst synthesis of any number of layers is possible, the thicker layers have properties closer...

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2011-03-22 09:16:44

A new "templated growth" technique for fabricating nanoribbons of epitaxial graphene has produced structures just 15 to 40 nanometers wide that conduct current with almost no resistance. These structures could address the challenge of connecting graphene devices made with conventional architectures "“ and set the stage for a new generation of devices that take advantage of the quantum properties of electrons. "We can now make very narrow, conductive nanoribbons that have quantum...

2011-01-20 15:30:00

MILPITAS, Calif., Jan. 20, 2011 /PRNewswire/ -- Today, KLA-Tencor Corporation (Nasdaq: KLAC), the world's leading supplier of process control and yield management solutions for the semiconductor and related industries, introduced its new Candela® 8620 substrate and epitaxy (epi) wafer inspection system. Designed for high brightness light emitting diode (HBLED) manufacturers, the Candela 8620 provides automated defect inspection for LED materials such as gallium nitride,...

2010-12-08 00:35:01

Osaka, Dec 8, 2010 - (JCN Newswire) - Panasonic today announced the development of a new technique to drastically increase the blocking voltage of Gallium Nitride (GaN) -based power switching transistor on silicon (Si) substrates. The blocking voltage of the Si substrate can be added to that of the GaN transistor by the new structure which will enable the blocking voltage over 3000V. The new GaN transistor extends the operating voltages of a variety of power switching systems including...

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2010-11-23 07:22:02

There's good news in the search for the next generation of semiconductors. Researchers with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley, have successfully integrated ultra-thin layers of the semiconductor indium arsenide onto a silicon substrate to create a nanoscale transistor with excellent electronic properties. A member of the III"“V family of semiconductors, indium arsenide offers several...


Word of the Day
glogg
  • Scandinavian punch made of claret and aquavit with spices and raisins and orange peel and sugar.
This word comes from the Swedish 'glogg,' which is an alteration of 'glodgat,' mulled (wine).
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