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Last updated on April 16, 2014 at 17:34 EDT

Latest Ferroelectric RAM Stories

2014-03-26 16:28:12

LONDON, March 26, 2014 /PRNewswire/ -- Reportbuyer.com just published a new market research report: Global Ferroelectric RAM Market 2014-2018 TechNavio's analysts forecast the Global F-RAM market to grow at a CAGR of 16.4 percent over the period 2013-2018. One of the key factors contributing to this market growth is the low power consumption feature of F-RAMs. The Global F-RAM market has also been witnessing the increasing investment in R&D by the vendors. However, the reduced...

2014-01-01 23:00:33

Global Ferroelectric RAM Market 2014-2018 report says one of the key factors contributing to this market growth is the low power consumption feature of F-RAMs. Dallas, Texas (PRWEB) January 01, 2014 The Global F-RAM market is witnessing the trend of increasing investment in R&D by the leading market vendors. Some of the leading vendors such as Ramtron, Texas Instruments, and Fujitsu have increased their investment in the R&D of F-RAM hardware and software. These vendors have...

2013-11-14 08:39:24

Battery-free Solution Reduces Cost of Development and Ownership in a Wide Range of Systems SUNNYVALE, Calif., Nov. 14, 2013 /PRNewswire/ -- Fujitsu Semiconductor America today added to its industry-leading family of ferroelectric memory products with the new MB85R4M2T, a 4-megabit FRAM chip that can replace standard SRAM in industrial machinery, office equipment, medical devices, and other equipment. (Logo: http://photos.prnewswire.com/prnh/20120412/SF85935LOGO-b) The new MB85R4M2T...

2013-04-26 08:25:21

DUBLIN, April 26, 2013 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/vssc2w/global_next) has announced the addition of the "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" report to their offering. (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) Next...

2013-03-14 12:32:32

ReportsnReports.com now offers "Emerging Non-Volatile Memory" report that says higher-density NVM chips will spawn many new applications and increase the business ten-fold in just five years DALLAS, March 14, 2013 /PRNewswire-iReach/ -- MRAM / STTMRAM And PCM Will Lead The NVM Market Reaching A Combined $1.6b By 2018 By 2018, MRAM / STTMRAM and PCM will surely be the top two NVM on the market. Combined, they will represent a $1.6B business by 2018, and their sales will almost double...

2013-02-18 23:20:11

Research and Markets announces the addition of "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" to its catalogue. (PRWEB) February 18, 2013 Next generation memories are the emerging non-volatile memory technologies, which are expected to replace existing memories. Not all existing memories will be replaced though. Next generation...

2012-12-15 05:03:22

New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography” created by MarketsandMarkets has been recently published by Market Publishers Ltd. According to the study, the worldwide next generation memory market is predicted to witness growth at a CARG of over 7.2% over 2012-2017. London, UK (PRWEB) December...

2012-11-30 04:20:56

DALLAS, November 30, 2012 /PRNewswire/ -- According to a new market research report, "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" published by MarketsandMarkets (http://www.marketsandmarkets.com), the total market for next generation memory is expected to reach $90.74 million by 2017 at an estimated CAGR of 7.3% from...

2012-11-26 14:44:24

The new device is protected with ten international patents including Japan, the USA, Corea and the European Union. The most important electronic companies worldwide such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device. The project has been conducted by researchers at the University of Granada (Spain) and the CEA-LETI Lab (Grenoble, France). University of Granada researchers have developed a revolutionary data storage device in...

2012-03-02 08:00:00

SUNNYVALE, Calif., March 2, 2012 /PRNewswire/ -- Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage range of 3.0V to 5.5V, offering significant design flexibility for consumer and industrial applications. The new V series includes products ranging from 16kbit to 256kbit, covering both I2C and SPI interfaces. The...