Latest Ferroelectric RAM Stories
Research and Markets announces the addition of "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase
New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric
The new device is protected with ten international patents including Japan, the USA, Corea and the European Union.
For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.
Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.
Using a technique known as thermochemical nanolithography (TCNL), researchers have developed a new way to fabricate nanometer-scale ferroelectric structures directly on flexible plastic substrates that would be unable to withstand the processing temperatures normally required to create such nanostructures.
SUNNYVALE, Calif., July 13, 2011 /PRNewswire/ -- Fujitsu Semiconductor America, Inc.
- A ceramic container used inside a fuel-fired kiln to protect pots from the flame.