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Latest Ferroelectric RAM Stories

2012-11-26 14:44:24

The new device is protected with ten international patents including Japan, the USA, Corea and the European Union. The most important electronic companies worldwide such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device. The project has been conducted by researchers at the University of Granada (Spain) and the CEA-LETI Lab (Grenoble, France). University of Granada researchers have developed a revolutionary data storage device in...

2011-11-18 03:32:58

For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states. Ferroelectric materials have the potential to replace current memory designs, offering greater storage capacity than magnetic hard drives and faster write speed and longer lifetimes than flash memory. Replacing dynamic random access memory–the short-term memory that allows your computer to operate–with...

2011-09-27 17:53:23

Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices. The technology combines silicon nanowires with a "ferroelectric" polymer, a material that switches polarity when electric fields are applied, making possible a new type of ferroelectric transistor. "It's in a very nascent stage," said doctoral student Saptarshi Das, who is working with Joerg Appenzeller, a professor of...

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2011-07-19 08:54:51

Writing nanostructures Using a technique known as thermochemical nanolithography (TCNL), researchers have developed a new way to fabricate nanometer-scale ferroelectric structures directly on flexible plastic substrates that would be unable to withstand the processing temperatures normally required to create such nanostructures. The technique, which uses a heated atomic force microscope (AFM) tip to produce patterns, could facilitate high-density, low-cost production of complex ferroelectric...

2011-07-13 08:00:00

SUNNYVALE, Calif., July 13, 2011 /PRNewswire/ -- Fujitsu Semiconductor America, Inc. (FSA) today introduced a new series of advanced Ferroelectric Random Access Memory (FRAM) products designed and manufactured by Fujitsu to meet the rapidly increasing demand for FRAM in industrial systems, factory automation, metering, and many other low-power applications that require high-performance, non-volatile memory. The new MB85RSxxx SPI FRAM family includes three different devices: the 256-Kbit...

2011-03-15 20:28:48

Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than magnetic hard drives and faster write speed and longer lifetimes than flash memory. In ferroelectric memory the direction of molecules' electrical polarization serves as a 0 or a 1 bit. An electric field is used to flip the polarization, which is how data is stored. With his colleagues at...

2009-06-18 07:33:46

Electronic devices of the future could be smaller, faster, more powerful and consume less energy because of a discovery by researchers at the Department of Energy's Oak Ridge National Laboratory.The key to the finding, published in Science, involves a method to measure intrinsic conducting properties of ferroelectric materials, which for decades have held tremendous promise but have eluded experimental proof. Now, however, ORNL Wigner Fellow Peter Maksymovych and co-authors Stephen Jesse, Art...


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