Latest Ferroelectricity Stories
Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.
If solar cells could generate higher voltages when sunlight falls on them, they'd produce more electrical power more efficiently.
Engineers at the University of California, Berkeley, have shown that it is possible to reduce the minimum voltage necessary to store charge in a capacitor, an achievement that could reduce the power draw and heat generation of today's electronics.
An international team of researchers from France and Germany has developed a new material which is the first to react magnetically to electrical fields at room temperature.
HZB scientists observe how a material at room temperature exhibits a unique property.
Hailed as the new "wonder material," graphene is being tapped by an international research team to help overcome issues associated with increasing the storage density and speed of electronic memory devices.
New multiferroic mechanism could lead to next-generation memory and sensing devices.
Using a technique known as thermochemical nanolithography (TCNL), researchers have developed a new way to fabricate nanometer-scale ferroelectric structures directly on flexible plastic substrates that would be unable to withstand the processing temperatures normally required to create such nanostructures.
Novel properties of ferroelectric materials discovered at the Department of Energy's Oak Ridge National Laboratory are moving scientists one step closer to realizing a new paradigm of electronic memory storage.
A University of Pittsburgh-led team has created a single-electron transistor that provides a building block for new, more powerful computer memories, advanced electronic materials, and the basic components of quantum computers.
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