Latest Ferroelectricity Stories
Novel properties of ferroelectric materials discovered at the Department of Energy's Oak Ridge National Laboratory are moving scientists one step closer to realizing a new paradigm of electronic memory storage.
A University of Pittsburgh-led team has created a single-electron transistor that provides a building block for new, more powerful computer memories, advanced electronic materials, and the basic components of quantum computers.
A new way of understanding the structure of proteins, polymers, minerals, and engineered materials will be published in the May 2011 issue of the journal Nature Materials.
Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than magnetic hard drives and faster write speed and longer lifetimes than flash memory.
The change-over to lead-free products is in full progress.
The second law of thermodynamics is a big hit with the beret-wearing college crowd because of its implicit existential crunch.
Chinese scientists have shown that magnetic memory, logic and sensor cells can be made faster and more energy efficient by using an electric, not magnetic, field to flip the magnetization of the sensing layer only about halfway, rather than completely to the opposite direction.
Scientists at Tohoku University in Japan have recorded data at a density of 4 trillion bits per square inch, which is a world record for the experimental "ferroelectric" data storage method.
A newly discovered path for the conversion of sunlight to electricity could brighten the future for photovoltaic technology.
Two of The Florida State University's most accomplished scientists recently joined forces on a collaborative research project that has yielded groundbreaking results involving an unusual family of crystalline minerals.
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