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Last updated on April 24, 2014 at 1:21 EDT

Latest Gallium arsenide Stories

2014-04-11 08:26:05

DUBLIN, April 11, 2014 /PRNewswire/ -- Research and Markets ( http://www.researchandmarkets.com/research/f5zjtc/the_gaas_ic_market) has announced the addition of the "The GaAs IC Market" [http://www.researchandmarkets.com/research/f5zjtc/the_gaas_ic_market ] report to their offering. <start_newscom> (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) The biggest enabler of the mobile data increase and the most important driver of the GaAs RF IC market...

2014-03-17 08:22:13

New entity will be the number one supplier to the defense sector BOSTON, March 17, 2014 /PRNewswire/ -- RFMD and TriQuint announced plans to merge operations creating a company that will surpass the current market leader, Skyworks, in the supply of advanced semiconductor products. The Strategy Analytics Advanced Defense Systems (ADS) service report, "TriQuint-RFMD Merger Solidifies Semiconductor Market Share Lead in Defense Sector," provides analysis on this deal and outlines the market...

2014-03-04 08:28:37

Data demand and new architectures will drive growth BOSTON, March 4, 2014 /PRNewswire/ -- With CATV and broadband services becoming integral parts of service providers bundles, network infrastructure is evolving rapidly to keep up with growing demand. The Strategy Analytics GaAs and Compound Semiconductor Technology (GaAs) service forecast and data model describes trends and forecasts for semiconductor-based amplifier building blocks used in the evolution of hybrid fiber coax (HFC) and...

2014-02-06 12:30:04

LONDON, Feb. 6, 2014 /PRNewswire/ -- Reportbuyer.com just published a new market research report: Global GaAs Device Market 2012-2016 TechNavio's analysts forecast the Global Gallium and Arsenic (GaAs) Device market to grow at a CAGR of 3.1 percent over the period 2012-2016. One of the key factors contributing to this market growth is the increasing global adoption of smartphones. The Global GaAs Device market has also been witnessing an increasing number of collaborations among...

2014-01-28 16:28:24

DUBLIN, January 28, 2014 /PRNewswire/ -- Research and Markets ( http://www.researchandmarkets.com/research/sngrmk/industry_and) has announced the addition of the "Compound Semiconductor MMICs Market Report" [http://www.researchandmarkets.com/research/sngrmk/industry_and ] report to their offering. (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) This report provides market data on MMICs fabricated using GaAs, GaN, InP, SiC and SiGe into the...

2014-01-15 12:28:31

Devices available in a TO-46 flat top package with spectral sensitivity in the 800nm to 1750nm range. LATHAM, N.Y., Jan. 15, 2014 /PRNewswire-iReach/ -- Marktech Optoelectronics (www.MarktechOpto.com) is pleased to introduce its line of PIN Photo Diode components based on InGaAs/InP technology. These devices are currently available in a TO-46 flat top package with a spectral sensitivity in the 800nm to 1750nm range. (Photo: http://photos.prnewswire.com/prnh/20140115/MN46738) Photo...

Low-power Tunneling Transistor For High-performance Devices At Low Voltage
2013-12-13 12:09:31

Penn State A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers. Called a near broken-gap tunnel field effect transistor (TFET), the new device uses the quantum mechanical tunneling of electrons through an ultrathin energy barrier to provide high current at low voltage. Penn State,...

2013-12-03 23:31:10

International optoelectronic sensor semi-conductor specialists Light in Motion LLC today announces a new range of sub-miniature surface mount emitters and detectors with high outputs and increased sensitivity. Milpitas, San Jose (PRWEB) December 03, 2013 Light in Motion are pleased to announce the newest additions to their extensive Sub-miniature Surface Mount Optical Sensor Range: QTLP660CIR: GaAs Infrared emitter with a 30 degree emission angle QTLP660CPD: matching transistor...

2013-11-26 16:21:24

TORONTO, Nov. 26, 2013 /PRNewswire/ -- Trio Resources, Inc. ("Trio" or the "Company") (OTCBB: TRII; www.trioresources.com) has joined a consortium that is researching ways to take arsenic, a waste product commonly found in mines across Canada, and use it in the production of solar panels. Trio will work with scientists in Europe and North America to develop a replacement for the silicon in photovoltaic cells with Gallium arsenide ("GaAs"). The Company will contribute to the consortium...

2013-11-18 08:25:09

DUBLIN, November 18, 2013 /PRNewswire/ -- Research and Markets ( http://www.researchandmarkets.com/research/5zcvjp/active) has announced the addition of the "RCPH Industry and Market Forecasts to 2017" [http://www.researchandmarkets.com/research/5zcvjp/active ] report to their offering. (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) In the past RF power amplifiers (RFPAs) for cell phone handsets have relied exclusively on GaAs or InGaP-based RFICs....