Quantcast
Last updated on April 16, 2014 at 6:17 EDT

Latest Gallium(III) arsenide Stories

2012-06-20 02:32:30

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*), a committed leader that collaborates with technology companies to create breakthrough designs, today announced a Ka-Band High Power gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class. Targeted to SATCOM applications such as high definition video...

2012-06-20 02:32:21

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the introduction of its new gallium nitride (GaN) hybrid IC (HIC), which is optimized for high gain and power. Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active...

2012-06-20 02:31:55

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with the addition of two new devices optimized for power efficiency. The new power added efficiency enhanced GaAs FETs are targeted to microwave radios and block up convertors (BUCs), and will be exhibited in...

2012-06-11 22:20:08

NEWPORT BEACH, Calif. and LONDON, June 12, 2012 /PRNewswire/ -- TowerJazz, the global specialty foundry leader and Phasor Solutions, today announced a new phased array technology for communications on the move using SiGe process platforms from TowerJazz. Phasor is targeting the multi-billion dollar satellite communications and radar market with a unique, ground breaking design that provides order of magnitude improvement over competing solutions. Phasor recently demonstrated a proprietary...

2012-05-08 06:25:25

NEW YORK, May 8, 2012 /PRNewswire/ -- SMG Indium Resources Ltd. (the "Company") (OTCBB: SMGI, SMGIW, SMGIU), is pleased to mark the one year anniversary of its Initial Public Offering ("IPO"). Over the past year, the Company has amassed, without disrupting the market, what it believes to be the world's largest known strategic stockpile of indium held outside of the People's Republic of China. The Company now holds, in a secure vault located in New York City, approximately 42.5 metric tons...

2012-01-13 21:28:00

HARTFORD, Conn., Jan. 13, 2012 /PRNewswire-iReach/ -- Global Information, Inc. (GII) is pleased to announce a new market research report, "The GaAs IC Market" by The Information Network. (Photo: http://photos.prnewswire.com/prnh/20120113/CG35857) Weak wireless demand resulted in nearly stagnant growth in Gallium Arsenide (GaAs) ICs in 2011, according to The Information Network's new report, The GaAs IC Market "Every cell phone contains Power Amplifiers (PA), which enables the...

2012-01-05 14:40:00

PIoNIR:640, the world´s first scientific-grade camera to utilize a deep-cooled InGaAs (indium gallium arsenide) focal plane array. Applications: nanotube fluorescence imaging to photovoltaic (PV) inspection. Trenton, New Jersey (PRWEB) January 05, 2012 Princeton Instruments is pleased to introduce the PIoNIR:640, the world´s first scientific-grade camera to utilize a deep-cooled InGaAs (indium gallium arsenide) focal plane array. The PIoNIR is specifically designed for use in...

2011-12-06 23:47:51

Researchers from Purdue and Harvard universities have created a new type of transistor made from a material that could replace silicon and have a 3-D structure instead of conventional flat computer chips. The approach could enable engineers to build faster, more compact and efficient integrated circuits and lighter laptops that generate less heat than today's. The transistors contain tiny nanowires made not of silicon, like conventional transistors, but from a material called...

2011-11-09 10:27:17

Tiny wires could help engineers realize high-performance solar cells and other electronics, according to University of Illinois researchers. The research group, led by electrical and computer engineering professor Xiuling Li, developed a technique to integrate compound semiconductor nanowires on silicon wafers, overcoming key challenges in device production. The team published its results in the journal Nano Letters. Semiconductors in the III-V (pronounced three-five) group are...

2011-11-04 08:20:01

Achieved with Triple-Junction Compound Solar Cell Osaka, Nov 4, 2011 - (JCN Newswire) - Sharp Corporation has achieved the world's highest solar cell conversion efficiency(1) of 36.9%(2) using a triple-junction compound solar cell in which the solar cell has a stacked three-layer structure.Compound solar cells utilize photo-absorption layers made from compounds consisting of two or more elements, such as indium and gallium. Because of their high conversion...