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Latest Gallium(III) arsenide Stories

2010-07-20 12:43:49

Physicists in the United States and Germany have discovered a way to use a gallium arsenide nanodevice as a signal processor at "terahertz" speeds, the first time it's been used for this purpose and an important step forward in the new world of optical communication and computing. Existing communications and computer architecture are increasingly being limited by the pedestrian speed of electrons moving through wires, and the future of high-speed communication and computing is in optics,...

2010-06-16 05:28:00

DALLAS, June 16, 2010 /PRNewswire/ -- - ReportsandReports Announce it Will Carry Compound Semiconductor Substrates 2010 (http://www.reportsandreports.com/Report/25609/) Market Research Report in its Store. - Browse the complete Report on: http://www.reportsandreports.com/market-reports/compound-semiconductor-substr ates-2010/ (Due to the length of these URLs, it may be necessary to copy and paste the hyperlinks into your Internet browser's URL address field. Remove any...

2010-05-26 09:00:00

ANAHEIM, Calif., May 26 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of their Ku-Band gallium arsenide field effect transistor (GaAs FETs) lineup with two higher output power devices rated for 18 and 30 watts (W). The new power amplifier GaAs FETs will be shown in TAEC's booth, #813, at the 2010 IEEE MTT-S International Microwave Symposium, which will be held May 25 through May 27 in Anaheim,...

2010-05-25 09:00:00

ANAHEIM, Calif., May 25 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with a new "EL" series of high performance C-Band devices optimized for both high gain and power added efficiency. The "EL" high gain GaAs FETs are targeted for microwave radios and solid-state power amplifiers (SSPAs) and will be exhibited in TAEC's booth, #813, at...

2010-05-25 09:00:00

ANAHEIM, Calif., May 25 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., are adding a 4 watt (W) C-Band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) for satellite applications. Developed by Toshiba Corp. (Toshiba) the new MMIC, along with other new products, will be shown in TAEC's booth, #813, at the 2010 IEEE MTT-S International Microwave Symposium, which will be held May 25 through May 27 in Anaheim,...

2010-05-24 19:45:00

ANAHEIM, Calif., May 24 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the addition of a 50W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family. The new device will be shown at the 2010 IEEE MTT-S International Microwave Symposium, during the conference exhibition, May 25-27 in Anaheim, California. The 50W TGI7785-50L is another commercial C-Band...

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2010-05-20 09:25:28

Thanks to a new semiconductor manufacturing method pioneered at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry standard semiconductor in most electronic devices, including the photovoltaic cells that solar panels use to convert sunlight into energy, it is hardly the most efficient material available. For example, the semiconductor gallium arsenide and related compound semiconductors offer nearly twice the efficiency as silicon in...

2010-04-06 03:00:00

LONDON, April 6 /PRNewswire/ -- Based on its recent analysis of the solar power industry, Frost & Sullivan recognizes AZUR SPACE Solar Power GmbH (AZUR SPACE) with the "2009 World Solar Power Industry Growth Leadership Award." AZUR SPACE has carved a niche for itself in the field of space and terrestrial solar cell applications by providing high-performance solar cells. The company's Si and GaAs solar cells are renowned for their unmatched quality and efficiency rates. In fact, AZUR...

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2010-02-09 09:35:00

Just as the heartbeats of today's electronic devices depend on the ability to switch the flow of electricity in semiconductors on and off with lightning speed, the viability of the "spintronic" devices of the future -- technologies that manipulate both the flow and magnetic "spin" of electrons -- will require similarly precise control over semiconductor magnetism. Achievement of this goal necessitates a detailed understanding of what happens at the exact transition point when a semiconductor...

2009-11-10 07:10:00

PHOENIX, Nov. 10 /PRNewswire/ -- To address growing market demand for its compound semiconductor epitaxial deposition services, used primarily in making high-frequency ICs for wireless communication applications, Sumika Electronic Materials is installing an additional Aixtron 2600 G3 epi reactor to its foundry operation in Phoenix. "Our capacity expansion is in response to the steadily increasing demand we're seeing for our GaAs (gallium arsenide) epi wafer services from producers of HBT...


Word of the Day
holluschickie
  • A 'bachelor seal'; a young male seal which is prevented from mating by its herd's older males (mated bulls defending their territory).
This comes from the Russian word for 'bachelors.'
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