Latest Gallium nitride Stories
Unique Design, Packaging and Manufacturing Expertise Enables Oclaro to Deliver Laser Diodes with Highest Performance and Brightness over an Expanded Wavelength Range SAN JOSE, Calif., May 13, 2013 /PRNewswire/ -- Oclaro, Inc.( )(NASDAQ: OCLR), a tier-one provider and innovator of optical communications and laser solutions, today announced the industry's broadest wavelength range of high-power, high-brightness laser diodes enabling multi-kilowatt direct diode systems. The company's...
In order to meet the growing demand for its newest line of world leading Solid State Power Amplifiers featuring GaN Technology and next generation Discovery VSAT Hubs with A-SAT Optimization, Advantech Wireless today announced the opening of its new headquarters office in US. Montreal, Canada (PRWEB) May 10, 2013 In order to meet the growing demand for its newest line of world leading Solid State Power Amplifiers featuring GaN Technology and next generation Discovery VSAT Hubs with A-SAT...
Advantech Wireless today announced the launch of its New Sapphire Series 1,250W Ku-Band UltraLinear GaN SSPA/BUC, the ultimate Solution for Direct to Home TV. Montreal, Canada (PRWEB) May 09, 2013 Advantech Wireless Inc., a global wireless solutions provider, for Satellite, RF Equipment, Microwave Troposcatter and Point-to-Point Systems, today announced the launch of its New Sapphire Series 1,250W Ku-Band UltraLinear GaN SSPA/BUC. Exceeding all barriers between Klystrons, TWTs and SSPAs,...
University of Utah Nanocrystal semiconductor for photovoltaics, medical sensors, heat reuse University of Utah metallurgists used an old microwave oven to produce a nanocrystal semiconductor rapidly using cheap, abundant and less toxic metals than other semiconductors. They hope it will be used for more efficient photovoltaic solar cells and LED lights, biological sensors and systems to convert waste heat to electricity. Using microwaves "is a fast way to make these particles that...
Georgia Institute of Technology Using bundles of vertical zinc oxide nanowires, researchers have fabricated arrays of piezotronic transistors capable of converting mechanical motion directly into electronic controlling signals. The arrays could help give robots a more adaptive sense of touch, provide better security in handwritten signatures and offer new ways for humans to interact with electronic devices. The arrays include more than 8,000 functioning piezotronic transistors, each of...
Major milestone for GaN power electronics; JEDEC qualification of GaN on silicon enables mass adoption price points for devices providing dramatically improved power efficiency GOLETA, Calif., March 14, 2013 /PRNewswire/ -- Transphorm Inc. today announced the Total GaN(TM) family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing the world's first JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based...
Company debuts MOCVD Platform for low-cost high-volume manufacture of HB-LEDS, with extendibility to GaN-on-Silicon applications SHANGHAI, March 13, 2013 /PRNewswire/ -- At SEMICON China next week, Advanced Micro-Fabrication Equipment Inc. (AMEC) will make its Solid-State Lighting (SSL) market debut with a new multi-reactor Metal Organic Chemical Vapor Deposition (MOCVD) cluster tool. The Prismo D-Blue(TM) MOCVD platform enables high-volume manufacturing of sophisticated GaN,...
Transphorm named among 20 global companies changing the future of energy. GOLETA, Calif., March 4, 2013 /PRNewswire/ -- Transphorm Inc. announced today that its CEO Umesh Mishra will present as an Energy Innovation Pioneer at IHS CERAWeek 2013. Being held March 4-8 in Houston, CERAWeek is a global conference drawing senior energy decision-makers, industry executives, government officials and thought leaders from around the world. CERAWeek 2013's 20 Energy Innovation Pioneers were...
600V Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and modules employ patented EZ-GaNTM technology; achieve vital milestone in broad adoption of GaN-based power conversion WASHINGTON, Feb. 27, 2013 /PRNewswire/ -- Transphorm Inc. today announced at the 2013 ARPA-E Energy Innovation Summit that its novel 600V Gallium Nitride (GaN) module has enabled the world's first GaN-based high power converter. (Logo: http://photos.prnewswire.com/prnh/20120912/LA73206LOGO)...
MOSCOW and ZELENOGRAD, Russia, February 13, 2013 /PRNewswire/ -- As the global Power Electronics industry is shifting production from 150 to 200 mm substrates, Epiel JSC introduces to the market 200 mm silicon epitaxial wafers for discrete power devices. According to industry analysts Power Electronics is likely to remain one of the most attractive sectors of semiconductor market in the next few years. Energy efficiency is gaining more and more emphasis in areas such as...
