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Latest Gallium nitride Stories

World's Smallest Semiconductor Laser Created
2012-07-26 13:53:29

Physicists at The University of Texas at Austin, in collaboration with colleagues in Taiwan and China, have developed the world's smallest semiconductor laser, a breakthrough for emerging photonic technology with applications from computing to medicine. The scientists report their efforts in this week's Science. Miniaturization of semiconductor lasers is key for the development of faster, smaller and lower energy photon-based technologies, such as ultrafast computer chips; highly...

World's First Violet Nonpolar Vertical-Cavity Laser Technology Developed
2012-07-23 09:09:07

UC Santa Barbara solid state lighting team develops the first m-plane nitride based nonpolar vertical-cavity surface-emitting lasers (VCSELs) In a leap forward for laser technology, a team at University of California, Santa Barbara, has developed the first violet nonpolar vertical-cavity surface-emitting lasers (VCSELs) based on m-plane gallium nitride semiconductors. This recent discovery by LED pioneer Shuji Nakamura and his research team at UCSB is an achievement in VCSEL technology...

2012-07-10 22:21:32

DALLAS, July 11, 2012 /PRNewswire/ -- The new report "Gallium Nitride (GaN) Semiconductor Devices (Discretes & ICs) Market, Global Forecast & Analysis (2012 - 2022)" published by MarketsandMarkets ( http://www.marketsandmarkets.com), defines and segments the global GaN Semiconductors market (including both, power semiconductors and optosemiconductors) with analysis and forecasting of the revenues and volumes for the overall market and all its sub-segments. Browse...

2012-07-09 10:21:03

BERNIN, France and CHONGQING, China, July 9, 2012 /PRNewswire/ -- Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian), an established supplier of materials, devices and systems for the lighting industry, have partnered to jointly develop gallium nitride (GaN) template wafers using hydride vapor phase...

2012-07-03 10:13:54

Experts at The University of Nottingham are the first to create a stable version of a ℠trophy molecule´ that has eluded scientists for decades. In research published in the prestigious journal Science, the team of chemists at Nottingham has shown that they can prepare a terminal uranium nitride compound which is stable at room temperature and can be stored in jars in crystallized or powder form. Previous attempts to prepare uranium-nitrogen triple bonds have required...

Nanotech Jump For Solar Cells
2012-06-22 05:18:43

Solar power cells are limited by the wavelengths of light they can absorb from the sun. Ideally a solar cell would absorb every wavelength, but to date the goal has not been reached. Silicon, today's photovoltaic industry standard, is limited in the wavelength range it can 'see' and absorb. A possible solution has been found in indium gallium nitride. Using this material, scientists can tune the material's response so it collects solar energy from a variety of wavelengths. The more...

2012-06-20 02:32:30

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*), a committed leader that collaborates with technology companies to create breakthrough designs, today announced a Ka-Band High Power gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class. Targeted to SATCOM applications such as high definition video...

2012-06-20 02:32:21

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the introduction of its new gallium nitride (GaN) hybrid IC (HIC), which is optimized for high gain and power. Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active...

2012-06-20 02:31:55

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with the addition of two new devices optimized for power efficiency. The new power added efficiency enhanced GaAs FETs are targeted to microwave radios and block up convertors (BUCs), and will be exhibited in...

2012-06-14 12:28:12

Chinese researchers have succeeded in transferring gallium nitride (GaN) light-emitting diodes (LEDs) grown on a layer of silicon to a layer of copper. The new copper substrate enabled the GaN crystals to release some of the internal stresses generated when they originally formed. This relaxation helped minimize the so-called "quantum confined stark effect," a vexing problem for LEDs that reduces their efficiency. In comparison with LEDs on silicon substrates, the light output of LEDs on...