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Last updated on April 17, 2014 at 7:47 EDT

Latest GaN Stories

2014-04-03 12:23:52

DUBLIN, April 3, 2014 /PRNewswire/ -- Research and Markets ( http://www.researchandmarkets.com/research/w29grv/gallium_nitride) has announced the addition of the "Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device & by Geography - Forecast & Analysis to 2013 - 2022" [http://www.researchandmarkets.com/research/w29grv/gallium_nitride ] report to their offering. (Logo:...

2014-02-25 08:21:11

Latest developments yield unprecedented performance for defense systems TEWKSBURY, Mass., Feb. 25, 2014 /PRNewswire/ -- Raytheon Company (NYSE: RTN) announced today that under the DARPA Microsystems Technology Office (MTO) Wide Bandgap Semiconductor Program, the company has systematically matured Gallium Nitride (GaN) from basic material to transistors, Monolithic Microwave Integrated Circuits (MMICs), Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel...

2013-10-23 08:32:41

Company Selected Under the ARPA-E's SWITCHES Program to Develop Large Area, Low-cost, High Quality Bulk GaN Substrates for Power Electronics FREMONT, Calif., Oct. 23, 2013 /PRNewswire/ -- Soraa, the world leader in the development of GaN on GaN LED technology, announced today that it has been awarded several million dollars in funding by U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) to pursue two projects related to the development of bulk GaN...

2013-07-16 12:29:35

George Stringer joins the company as Senior Vice President of North America Sales; Nick Farraway joins as Senior Vice President of International Sales FREMONT, Calif., July 16, 2013 /PRNewswire/ -- A surge in demand for Soraa's full visible spectrum GaN on GaN(TM) LED MR16 lamps has led the company to appoint two new leaders to its sales organization--George Stringer and Nick Farraway. George joins the company as Senior Vice President of North America Sales and Nick joins as Senior...

2013-05-29 08:23:38

Synthetic Diamond Enables Higher Performance Gallium Nitride Devices, Resulting in Smaller, Faster and Higher Power Electronic Devices for Defense and Commercial Applications SANTA CLARA, Calif., May 29, 2013 /PRNewswire/ -- Element Six, the world leader in synthetic diamond supermaterials and member of the De Beers Group of Companies, today announced it has acquired the assets and intellectual property of Group4 Labs, Inc. (Group4), a semiconductor wafer materials company that...

2013-04-30 10:57:44

A team of international researchers led by Northwestern Medicine scientists has identified how a defective protein plays a central role in a rare, lethal childhood disease known as Giant Axonal Neuropathy, or GAN. The finding is reported in the May 2013 Journal of Clinical Investigation. GAN is an extremely rare and untreatable genetic disorder that strikes the central and peripheral nervous systems of young children. Those affected show no symptoms at birth; typically around age three the...

2012-10-17 07:24:45

WARREN, N.J., Oct. 17, 2012 /PRNewswire/ -- ANADIGICS, Inc. (Nasdaq: ANAD), a world leader in radio frequency (RF) solutions, today introduced the ACA2428 gallium nitride (GaN) line amplifier MMIC. The new GaN power doubler line amplifier uses ANADIGICS' unique design architectures to provide best-in-class performance to ensure distortion-free video and audio in 1 GHz CATV systems. By delivering outstanding output power with low current consumption, the Company's GaN line amplifier helps to...

2012-09-27 14:21:24

SANTA CLARA, Calif., Sept. 27, 2012 /PRNewswire/ -- Soraa, the world's leading developer of GaN on GaN(TM) (gallium nitride on gallium nitride) solid-state lighting technology, announced today that co-founder Dr. Shuji Nakamura received the Inventor of the Year Award from The Silicon Valley Intellectual Property Law Association (SVIPLA). Each year the SVIPLA recognizes an individual who has made an exceptional contribution in the technical arts and this year has chosen to honor Dr. Nakamura...

2012-08-08 02:23:37

FREMONT, Calif., Aug. 8, 2012 /PRNewswire/ -- Soraa, the world's leading developer of GaN on GaN((TM)) (gallium nitride on gallium nitride) solid-state lighting technology, announced today that it has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on the development of bulk gallium nitride (GaN) substrates. Using GaN as a substrate holds promise for many industries, but has immediate applications for light-emitting diodes (LEDs), which Soraa...

2012-06-14 12:26:17

Gallium nitride (GaN) is a highly promising material for a wide range of optical and high-power electronic devices, which can be fabricated by dry etching with plasmas. However, the plasma-induced defects and surface residues that remain after such processes tend to degrade the optical and electrical properties of the devices. A team of Japanese researchers has developed and tested a new way to "heal" such defects. The team exposed plasma-damaged GaN to hydrogen (H) radicals at room...