Latest Inorganic compounds Stories

University of Utah Nanocrystal semiconductor for photovoltaics, medical sensors, heat reuse University of Utah metallurgists used an old microwave oven to produce a nanocrystal semiconductor rapidly using cheap, abundant and less toxic metals than other semiconductors. They hope it will be used for more efficient photovoltaic solar cells and LED lights, biological sensors and systems to convert waste heat to electricity. Using microwaves "is a fast way to make these particles that...

Georgia Institute of Technology Using bundles of vertical zinc oxide nanowires, researchers have fabricated arrays of piezotronic transistors capable of converting mechanical motion directly into electronic controlling signals. The arrays could help give robots a more adaptive sense of touch, provide better security in handwritten signatures and offer new ways for humans to interact with electronic devices. The arrays include more than 8,000 functioning piezotronic transistors, each of...

MIT researchers develop the smallest indium gallium arsenide transistor ever built Silicon's crown is under threat: The semiconductor's days as the king of microchips for computers and smart devices could be numbered, thanks to the development of the smallest transistor ever to be built from a rival material, indium gallium arsenide. The compound transistor, built by a team in MIT's Microsystems Technology Laboratories, performs well despite being just 22 nanometers (billionths of a...

University of California, Davis, researchers for the first time have looked inside gallium manganese arsenide, a type of material known as a "dilute magnetic semiconductor" that could open up an entirely new class of faster, smaller devices based on an emerging field known as “spintronics.” Materials of this type might be used to read and write digital information not by using the electron’s charge, as is the case with today’s electronic devices, but by using its "spin."...

Spintronic technology, in which data is processed on the basis of electron “spin” rather than charge, promises to revolutionize the computing industry with smaller, faster and more energy efficient data storage and processing. Materials drawing a lot of attention for spintronic applications are dilute magnetic semiconductors – normal semiconductors to which a small amount of magnetic atoms is added to make them ferromagnetic. Understanding the source of ferromagnetism in dilute magnetic...

FREMONT, Calif., Aug. 8, 2012 /PRNewswire/ -- Soraa, the world's leading developer of GaN on GaN((TM)) (gallium nitride on gallium nitride) solid-state lighting technology, announced today that it has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on the development of bulk gallium nitride (GaN) substrates. Using GaN as a substrate holds promise for many industries, but has immediate applications for light-emitting diodes (LEDs), which Soraa...

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*), a committed leader that collaborates with technology companies to create breakthrough designs, today announced a Ka-Band High Power gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class. Targeted to SATCOM applications such as high definition...

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the introduction of its new gallium nitride (GaN) hybrid IC (HIC), which is optimized for high gain and power. Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active...

MONTREAL, June 20, 2012 /PRNewswire/ -- 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with the addition of two new devices optimized for power efficiency. The new power added efficiency enhanced GaAs FETs are targeted to microwave radios and block up convertors (BUCs), and will be...

Berkeley Lab Researchers Resolve Controversy Over Gallium Manganese Arsenide that Could Boost Spintronic Performance A long-standing controversy regarding the semiconductor gallium manganese arsenide, one of the most promising materials for spintronic technology, looks to have been resolved. Researchers with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab)in collaboration with scientist from University of Notre Dame have determined the origin of the...