Latest Magnetoresistive Random Access Memory Stories

2013-12-30 12:16:46

Innovative Magnetoresistive Random Access Memory technology enables bigger and longer lasting memory in electronic systems A team of researchers from the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering has developed a new Magnetoresistive Random Access Memory (MRAM) technology that will boost information storage in electronic systems. The innovative technology will drastically increase storage space and enhance memory...

2013-08-01 23:18:30

Transparency Market Research adds new "Semiconductor Memory Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2012 - 2018" market research report to its report store. To Browse The Report, Visit http://www.transparencymarketresearch.com/semiconductor-memory-market.html. Albany, New York (PRWEB) August 01, 2013 Semiconductor memory is an essential constituent for today’s electronic devices. It’s a kind of device in which digital information is...

2013-05-21 23:00:51

According to BCC Research the global market for nanomagnetic materials and devices is expected to reach $9 billion by 2017. The data storage product sector of the nanomagnetics market generated nearly $6.9 billion in wholesale-level sales in 2012 and should reach nearly $8.4 billion in 2017 while markets for sensors, biosensors, bioassay products and GMR sensors will be the fastest growing segments. Wellesley, MA (PRWEB) May 21, 2013 According to BCC Research, the global market for...

2013-02-18 23:20:11

Research and Markets announces the addition of "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" to its catalogue. (PRWEB) February 18, 2013 Next generation memories are the emerging non-volatile memory technologies, which are expected to replace existing memories. Not all existing memories will be replaced though. Next generation...

New Energy-efficient Computer Memory Developed Using Magnetic Materials
2012-12-17 10:57:08

University of California MeRAM is up to 1,000 times more energy-efficient than current technologies By using electric voltage instead of a flowing electric current, researchers from UCLA's Henry Samueli School of Engineering and Applied Science have made major improvements to an ultra-fast, high-capacity class of computer memory known as magnetoresistive random access memory, or MRAM. The UCLA team's improved memory, which they call MeRAM for magnetoelectric random access memory, has...

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