Latest Magnetoresistive Random Access Memory Stories
GIA announces the release of a comprehensive global report on Advanced Solid-State Memory Systems.
In close collaboration with colleagues from Bochum and the Netherlands, researchers from the Helmholtz-Zentrum Berlin (HZB) have developed a novel, extremely-thin structure made of various magnetic materials.
Micron and Singapore's A*STAR Data Storage Institute to Develop Spin Transfer Torque Magnetic Random Access MemorySingapore, Nov 8, 2011 - (ACN Newswire) - Micron Technology,
Researchers from the National Institute of Standards and Technology (NIST) and University of Colorado Boulder (CU) have developed a low-power microchip that uses a combination of microfluidics and magnetic switches to trap and transport magnetic beads.
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