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Latest Monolithic microwave integrated circuit Stories

2014-10-09 12:21:10

Brand New Coaxial GaAs MMIC-based High Power Amplifiers Released by Pasternack IRVINE, Calif., Oct. 9, 2014 /PRNewswire-iReach/ -- Pasternack Enterprises, Inc., an industry-leading manufacturer and supplier of RF, microwave and millimeter wave products, announces the release of eight new high power linear amplifiers that provide accurate signal amplification across a multitude of commercial and defense applications such as communications, radar and sensors, test instrumentation,...

2014-10-07 08:40:21

From True DC to X-band, Peregrine's UltraCMOS® Technology Enables the Intelligent Integration of RF, Digital and Analog Components Onto a Single Die SAN DIEGO and ROME, Oct. 7, 2014 /PRNewswire/ -- EUROPEAN MICROWAVE WEEK -- Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the expansion of its integrated product portfolio into DC and X-band frequencies. Today, Peregrine introduces two new integrated...

2014-08-18 16:25:06

LONDON, Aug. 18, 2014 /PRNewswire/ -- Reportbuyer.com has added a new market research report:The GaAs IC Markethttps://www.reportbuyer.com/product/2244714/The-GaAs-IC-Market.htmlThe biggest enabler of the mobile data increase and the most important driver of the GaAs RF IC market is the handset segment. Much of the content of a handset is silicon-based, but power amplifiers (PAs) and switches in the front-end of the phone use GaAs devices. This report investigates the technology...

2014-06-03 16:20:49

REDONDO BEACH, Calif., June 3, 2014 /PRNewswire/ -- A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation (NYSE: NOC) has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links. http://photos.prnewswire.com/prnvar/20121024/LA98563LOGO The APN228 and APN229 power amplifiers were developed with the...

2014-06-02 23:07:07

Showcases New Power, Performance and Efficiency Benchmarks in Wireless/Cellular Infrastructure, Broadcasting and RF Energy Eindhoven, Netherlands, and Tampa Bay, Florida (PRWEB) June 02, 2014 NXP Semiconductors N.V. (NASDAQ: NXPI) today announced at IMS 2014 a series of innovative new solutions that consolidates the company’s leadership position in RF, with particular emphasis on enhancing the capabilities of wireless/cellular networks and digital broadcasting infrastructure. As the...

2014-05-29 08:20:53

Offering the Most Comprehensive Portfolio of RF, Microwave and Millimeter Wave Solutions that Includes Wideband and Low Noise Amplifiers and Switches for a Broad Range of Applications ALISO VIEJO, Calif., May 29, 2014 /PRNewswire/ -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced its entry into the monolithic microwave integrated circuit (MMIC) market space. Building on its...

2014-05-28 16:29:34

REDONDO BEACH, Calif., May 28, 2014 /PRNewswire/ -- A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation (NYSE: NOC) has developed two high performance Monolithic Microwave Integrated Circuit (MMIC) broadband ultra-low-noise amplifiers (LNA) that are in production for immediate delivery. http://photos.prnewswire.com/prnvar/20121024/LA98563LOGO The cost-effective indium phosphide (InP) high electron mobility transistor (HEMT) LNAs are for use in...

2014-05-07 16:20:41

REDONDO BEACH, Calif., May 7, 2014 /PRNewswire/ -- More than 36,000 integrated circuits fabricated by Northrop Grumman Corporation (NYSE: NOC) for the U.S. Air Force's fifth and sixth Advanced Extremely High Frequency (AEHF) satellites are allowing production to ramp up on a broad scale for both payloads. http://photos.prnewswire.com/prnvar/20121024/LA98563LOGO A photo accompanying this release is available at http://media.globenewswire.com/noc/mediagallery.html?pkgid=25201. Each...

2014-04-01 08:21:13

Diamond materials to triple power density TEWKSBURY, Mass., April 1, 2014 /PRNewswire/ -- Raytheon Company (NYSE: RTN) has achieved another significant milestone for next generation Gallium Nitride (GaN) Radio Frequency (RF) semiconductor technology. Through the Defense Advanced Research Projects Agency (DARPA) Near Junction Thermal Transport effort under the Thermal Management Technologies program, Raytheon's team is replacing GaN's current substrate, Silicon Carbide, with diamond,...

2014-03-06 08:36:45

CAMBRIDGE, England, March 6, 2014 /PRNewswire/ -- Plextek RF Integration (Plextek RFI), a UK design house specialising in microwave and millimetre-wave IC design, has announced that it has been selected by Cree, one of the world's leading innovators in GaN technology, as a preferred design resource to provide third party design services to Cree's European foundry customers. (Logo: http://photos.prnewswire.com/prnh/20140306/673823 ) The commercial availability...


Word of the Day
negawatt
  • A unit of saved energy.
Coined by Amory Lovins, chairman of the Rocky Mountain Institute as a contraction of negative watt on the model of similar compounds like megawatt.