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Last updated on April 20, 2014 at 14:04 EDT

Latest Nitrides Stories

2014-02-25 08:21:11

Latest developments yield unprecedented performance for defense systems TEWKSBURY, Mass., Feb. 25, 2014 /PRNewswire/ -- Raytheon Company (NYSE: RTN) announced today that under the DARPA Microsystems Technology Office (MTO) Wide Bandgap Semiconductor Program, the company has systematically matured Gallium Nitride (GaN) from basic material to transistors, Monolithic Microwave Integrated Circuits (MMICs), Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel...

2014-02-19 08:26:32

ALBANY, New York, February 19, 2014 /PRNewswire/ -- According to a new market report published by Transparency Market Research "GaN Semiconductor Devices (Power semiconductors, Opto semiconductors) Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019," the market was valued at USD 379.82 million in 2012, which is expected to reach USD 2,203.73 million by 2019, growing at a CAGR of 24.6% from 2013 to 2019. North America was the largest...

2014-02-05 16:25:10

DUBLIN, February 5, 2014 /PRNewswire/ -- Research and Markets ( http://www.researchandmarkets.com/research/bcnctd/freestanding_and) has announced the addition of the "Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics Report" [http://www.researchandmarkets.com/research/bcnctd/freestanding_and ] report to their offering. (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) LED applications will become the driving force of the...

2013-12-19 04:21:40

Cambridge Nanotherm's core technology aims at converting aluminium into aluminium oxide to produce a dielectric with high levels of thermal conductivity and dielectric strength. LONDON, Dec. 19, 2013 /PRNewswire/ -- Based on its recent research on the thermal management solutions for the LED lighting market, Frost & Sullivan presents Cambridge Nanotherm with the 2013 European Frost & Sullivan Award for Technology Innovation. Trends in the light emitting diode (LED) market point to a...

2013-12-11 12:22:04

FREMONT, Calif., Dec. 11, 2013 /PRNewswire/ -- Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN(TM)) LED technology, announced today that one of its founders, Dr. Shuji Nakamura, was recently honored by Lux Review Magazine as their "Person of the Year" and was inducted into Electronic Design's Hall of Fame for his outstanding work in the lighting industry. (Photo: http://photos.prnewswire.com/prnh/20131211/NY30470 ) The Lux Awards, jointly...

2013-12-03 16:21:42

DUBLIN, Ireland, December 3, 2013 /PRNewswire/ -- Research and Markets ( http://www.researchandmarkets.com/research/j3ldlx/boron_nitride_and) has announced the addition of the "Boron Nitride and Boron Carbide - Global Strategic Business Report" [http://www.researchandmarkets.com/research/j3ldlx/boron_nitride_and ] report to their offering. <start_newscom> (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) This report analyzes the worldwide markets...

2013-11-26 16:24:23

SALT LAKE CITY, Nov. 26, 2013 /PRNewswire/ -- Amedica Corporation, a biomaterials company, today announced a collaboration with Kyocera Industrial Ceramics Corporation, a worldwide leading ceramics producer, to manufacture medical devices from Amedica's Silicon Nitride biomaterial at Kyocera's Vancouver, WA facility. This collaboration includes the manufacture of Amedica's FDA approved Silicon Nitride spinal interbody devices and will broaden Amedica's ability to meet market...

2013-11-21 12:31:34

Working with the State of New York, Soraa will Open a Buffalo, NY Semiconductor Fabrication Plant and Employ Hundreds of Workers FREMONT, Calif., Nov. 21, 2013 /PRNewswire/ -- Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN(TM)) LED technology, announced today that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State of New York, the company will construct a new state-of-the-art GaN on...

2013-11-14 08:37:25

Leading GaN (Gallium Nitride) innovator continues to attract global customers across multiple applications GOLETA, Calif., Nov. 14, 2013 /PRNewswire/ -- Transphorm Inc. today announced that it has been invited to present at Delta Electronics' exclusive Power Design Engineering event in Shanghai, to be held Nov. 22(nd), 2013. Transphorm will present its JEDEC-qualified GaN (Gallium Nitride) on Silicon HEMT (high electron mobility transistor) products and applications based on its...

2013-10-28 11:35:24

New atomic layer-by-layer InGaN technology offers perfect crystal Did you know that crystals form the basis for the penetrating icy blue glare of car headlights and could be fundamental to the future in solar energy technology? Crystals are at the heart of diodes. Not the kind you might find in quartz, formed naturally, but manufactured to form alloys, such as indium gallium nitride or InGaN. This alloy forms the light emitting region of LEDs, for illumination in the visible range, and...