Latest Phase-change memory Stories
DUBLIN, April 26, 2013 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/vssc2w/global_next) has announced the addition of the "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" report to their offering. (Logo: http://photos.prnewswire.com/prnh/20130307/600769 ) Next...
Nonvolatile memory that can store data even when not powered is currently used for portable electronics such as smart phones, tablets, and laptop computers. Flash memory is a dominant technology in this field, but its slow writing and erasing speed has led to extensive research into a next-generation nonvolatile memory called Phase-Change Random Access Memory (PRAM), as PRAM's operating speed is 1,000 times faster than that of flash memory. PRAM uses reversible phase changes between the...
Research and Markets announces the addition of "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" to its catalogue. (PRWEB) February 18, 2013 Next generation memories are the emerging non-volatile memory technologies, which are expected to replace existing memories. Not all existing memories will be replaced though. Next...
New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography” created by MarketsandMarkets has been recently published by Market Publishers Ltd. According to the study, the worldwide next generation memory market is predicted to witness growth at a CARG of over 7.2% over 2012-2017. London, UK (PRWEB) December 14,...
DALLAS, November 30, 2012 /PRNewswire/ -- According to a new market research report, "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" published by MarketsandMarkets (http://www.marketsandmarkets.com), the total market for next generation memory is expected to reach $90.74 million by 2017 at an estimated CAGR of 7.3%...
GIA announces the release of a comprehensive global report on Advanced Solid-State Memory Systems. The global market for Advanced Solid-State Memory Systems is projected to surpass US$3.1 billion by 2018, owing to the rapid increase in storage requirements across the globe. In a knowledge-driven era where information is the engine that drives enterprises worldwide, management of information is gaining utmost importance. Other factors driving data growth and the ensuing storage needs...
A team led by Johns Hopkins engineers has discovered some previously unknown properties of a common memory material, paving the way for development of new forms of memory drives, movie discs and computer systems that retain data more quickly, last longer and allow far more capacity than current data storage media. The work was reported April 16 in the online edition of Proceedings of the National Academy of Sciences. The research focused on an inexpensive phase-change memory alloy...
Collaboration between the University of Southampton and the University of Cambridge has made ground-breaking advances in our understanding of the changes that materials undergo when rapidly heated. Using cutting edge equipment and specially designed MEM's sensors on loan from Mettler-Toledo, scientists from the University of Southampton's Optoelectronic Research Centre and the University of Cambridge's Department of Materials Science were able to probe the behavior of phase change memory...
HSINCHU, Taiwan, Nov. 2, 2011 /PRNewswire-Asia/ -- Macronix International Co., Ltd. today announced the company ranked 18th worldwide and number one among Taiwan's semiconductor industry in overall patent strength, according to the latest evaluation report by The Patent Board. The international rating again attests to Macronix's achievement in long-term development of leading-edge technologies and products following the company's winning of the Contribution Award of the 2011 National...
IBM has made a phase-change memory (PCM) breakthrough that may lead to the development of solid-state chips (SSD) that will match and surpass NAND flash technology data storage by 100 times the performance and with a greater lifespan, reports Computerworld.PCM chips created by IBM are able to store two bits of data per cell, and all this without data corruption problems, says IBM.NAND flash memory, which is currently used in SSD drives, has write rates as high as 2Gbit/sec, says...
