Latest Phase-change memory Stories
Research and Markets announces the addition of "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase
New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric
GIA announces the release of a comprehensive global report on Advanced Solid-State Memory Systems.
A team led by Johns Hopkins engineers has discovered some previously unknown properties of a common memory material, paving the way for development of new forms of memory drives, movie discs and computer systems that retain data more quickly, last longer and allow far more capacity than current data storage media.
Collaboration between the University of Southampton and the University of Cambridge has made ground-breaking advances in our understanding of the changes that materials undergo when rapidly heated.
IBM has made a phase-change memory (PCM) breakthrough that may lead to the development of solid-state chips (SSD) that will match and surpass NAND flash technology data storage by 100 times the performance and with a greater lifespan.
ZURICH, June 30, 2011 /PRNewswire/ -- For the first time, scientists at IBM Research (NYSE: IBM) have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods of time.
A University of California, San Diego faculty-student team is about to demonstrate a first-of-its kind, phase-change memory solid state storage device that provides performance thousands of times faster than a conventional hard drive and up to seven times faster than current state-of-the-art solid-state drives (SSDs).
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