Latest Resistive random-access memory Stories
The major drivers for the next generation memory market are faster switching time, high endurance, and better power efficiency.(
Transparency Market Research published a new report "Next Generation Memory Technologies Market: Global Industry Analysis, Market Size, Share, Growth, Trends and Forecast 2013 - 2019"
Spintronics-Based Technology, Described in Journal of Applied Physics, May Replace Volatile Memory And Enable Extremely Energy-Efficient, Hand-Cranked Or Solar-Powered Devices WASHINGTON,
This report from BCC Research provides an overview of the emerging memresistor and related technologies (e.g., memcapacitors and meminductors) market, identifies those that are most likely to
A team of researchers from the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering has developed a new Magnetoresistive Random Access Memory (MRAM) technology that will boost information storage in electronic systems.
Adesto Technologies presents paper at IEDM conference showing data retention of its proprietary CBRAM memory technology at 200°C. Sunnyvale, CA (PRWEB)
Startup company Crossbar emerged from stealth mode on Monday to announce a first of its kind memory chip it says will replace flash memory and enable a surge of innovation for consumer, enterprise, mobile and industrial applications.
Resistive memory cells (ReRAM) are regarded as a promising solution for future generations of computer memories.