Latest Resistive random-access memory Stories

Future nanoelectronic information storage devices are also tiny batteries – astounding finding opens up new possibilities Resistive memory cells (ReRAM) are regarded as a promising solution for future generations of computer memories. They will dramatically reduce the energy consumption of modern IT systems while significantly increasing their performance. Unlike the building blocks of conventional hard disk drives and memories, these novel memory cells are not purely passive components...

Nonvolatile memory that can store data even when not powered is currently used for portable electronics such as smart phones, tablets, and laptop computers. Flash memory is a dominant technology in this field, but its slow writing and erasing speed has led to extensive research into a next-generation nonvolatile memory called Phase-Change Random Access Memory (PRAM), as PRAM's operating speed is 1,000 times faster than that of flash memory. PRAM uses reversible phase changes between the...

New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography” created by MarketsandMarkets has been recently published by Market Publishers Ltd. According to the study, the worldwide next generation memory market is predicted to witness growth at a CARG of over 7.2% over 2012-2017. London, UK (PRWEB) December 14,...

DALLAS, November 30, 2012 /PRNewswire/ -- According to a new market research report, "Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric RAM), Application & Geography" published by MarketsandMarkets (http://www.marketsandmarkets.com), the total market for next generation memory is expected to reach $90.74 million by 2017 at an estimated CAGR of 7.3%...

The team of Professor Keon Jae Lee (Department of Materials Science and Engineering, KAIST) has developed fully functional flexible non-volatile resistive random access memory (RRAM) where a memory cell can be randomly accessed, written, and erased on a plastic substrate. Memory is an essential part in electronic systems, as it is used for data processing, information storage and communication with external devices. Therefore, the development of flexible memory has been a challenge to the...

SUNNYVALE, Calif., May 17, 2011 /PRNewswire/ -- Crocus Technology, a leading developer of MRAM technology, and RUSNANO, a premier nano-technology investment fund, today announced that they have closed an agreement to create an MRAM manufacturing company, with a combined investment totaling $300 million. Under the terms of the agreement, Crocus and RUSNANO will form Crocus Nano Electronics (CNE), to build an advanced MRAM facility in Russia, capable of manufacturing medium to high density...

Imagine building cheaper electronics on a variety of substrates -- materials like plastic, paper, or fabric. Researchers at Taiwan's National Chiao Tung University have made a discovery that opens this door, allowing them to build electronic components like diodes on many different substrates. They describe their findings in the journal Applied Physics Letters, published by the American Institute of Physics."Rectifying diodes are the fundamental building blocks in electronics," says...

HSINCHU, Taiwan, June 16 /PRNewswire-Asia/ -- Macronix International Co., Ltd. (TSE: 2337), a leading provider of non-volatile memory semiconductor solutions, today announced its research results that provide a successful path to the most scalable and most efficient 3D NAND Flash using its patented BE- SONOS (barrier engineering) charge-trapping technology and 3D decoding architecture. Because of the important breakthrough, this Macronix's work addressing 3D NAND Flash has been chosen...

NEW YORK, Dec. 8 /PRNewswire/ -- Reportlinker.com announces that a new market research report is available in its catalogue: Emerging Memory Technologies http://www.reportlinker.com/p0167124/Emerging-Memory-Technologies.html Sometime in the next decade, both DRAM and flash memories are expected to face fundamental scaling limitations. In DRAM, new device structures will be required to overcome short channel effects and junction leakage in the array transistor. In order to maintain the...

BOSTON, Sept. 21 /PRNewswire/ -- Spin Transfer Technologies is proud to announce a recent breakthrough in spin transfer MRAM development, in its sponsored research at New York University. Spin transfer MRAM, a new form of non-volatile computer memory, has seen much development attention by major memory manufacturers. Researchers in the Physics Department at New York University, working with engineering support from Spin Transfer Technologies, have demonstrated magnetic vector switching for...