Latest Resistive random-access memory Stories
New market research report “Global Next Generation Memory Market (2012 -2017), By Technology (DRAM, SRAM, Flash Memory, Memristor, Magneto Resistive RAM (MRAM), Phase Change RAM (PCRAM), Ferroelectric
The team of Professor Keon Jae Lee (Department of Materials Science and Engineering, KAIST) has developed fully functional flexible non-volatile resistive random access memory (RRAM) where a memory cell can be randomly accessed, written, and erased on a plastic substrate.
SUNNYVALE, Calif., May 17, 2011 /PRNewswire/ -- Crocus Technology, a leading developer of MRAM technology, and RUSNANO, a premier nano-technology investment fund, today announced that they have closed an agreement to create an MRAM manufacturing company, with a combined investment totaling $300 million.
Imagine building cheaper electronics on a variety of substrates -- materials like plastic, paper, or fabric.
HSINCHU, Taiwan, June 16 /PRNewswire-Asia/ -- Macronix International Co., Ltd.
NEW YORK, Dec.
BOSTON, Sept. 21 /PRNewswire/ -- Spin Transfer Technologies is proud to announce a recent breakthrough in spin transfer MRAM development, in its sponsored research at New York University.
A group of scientists at Korea Advanced Institute of Science and Technology (KAIST) has fabricated a working computer chip that is almost completely clear -- the first of its kind.
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