Quantcast
Last updated on April 24, 2014 at 17:35 EDT

Latest Resistive random-access memory Stories

Image 1 - Researchers Develop Fully Functional Flexible Memory
2011-11-04 03:29:49

The team of Professor Keon Jae Lee (Department of Materials Science and Engineering, KAIST) has developed fully functional flexible non-volatile resistive random access memory (RRAM) where a memory cell can be randomly accessed, written, and erased on a plastic substrate. Memory is an essential part in electronic systems, as it is used for data processing, information storage and communication with external devices. Therefore, the development of flexible memory has been a challenge to the...

2011-05-17 06:00:00

SUNNYVALE, Calif., May 17, 2011 /PRNewswire/ -- Crocus Technology, a leading developer of MRAM technology, and RUSNANO, a premier nano-technology investment fund, today announced that they have closed an agreement to create an MRAM manufacturing company, with a combined investment totaling $300 million. Under the terms of the agreement, Crocus and RUSNANO will form Crocus Nano Electronics (CNE), to build an advanced MRAM facility in Russia, capable of manufacturing medium to high density...

2010-07-28 13:21:03

Imagine building cheaper electronics on a variety of substrates -- materials like plastic, paper, or fabric. Researchers at Taiwan's National Chiao Tung University have made a discovery that opens this door, allowing them to build electronic components like diodes on many different substrates. They describe their findings in the journal Applied Physics Letters, published by the American Institute of Physics. "Rectifying diodes are the fundamental building blocks in electronics," says Tuo-Hung...

2010-06-16 21:00:00

HSINCHU, Taiwan, June 16 /PRNewswire-Asia/ -- Macronix International Co., Ltd. (TSE: 2337), a leading provider of non-volatile memory semiconductor solutions, today announced its research results that provide a successful path to the most scalable and most efficient 3D NAND Flash using its patented BE- SONOS (barrier engineering) charge-trapping technology and 3D decoding architecture. Because of the important breakthrough, this Macronix's work addressing 3D NAND Flash has been chosen as...

2009-12-08 11:49:00

NEW YORK, Dec. 8 /PRNewswire/ -- Reportlinker.com announces that a new market research report is available in its catalogue: Emerging Memory Technologies http://www.reportlinker.com/p0167124/Emerging-Memory-Technologies.html Sometime in the next decade, both DRAM and flash memories are expected to face fundamental scaling limitations. In DRAM, new device structures will be required to overcome short channel effects and junction leakage in the array transistor. In order to maintain the...

2009-09-21 08:01:00

BOSTON, Sept. 21 /PRNewswire/ -- Spin Transfer Technologies is proud to announce a recent breakthrough in spin transfer MRAM development, in its sponsored research at New York University. Spin transfer MRAM, a new form of non-volatile computer memory, has seen much development attention by major memory manufacturers. Researchers in the Physics Department at New York University, working with engineering support from Spin Transfer Technologies, have demonstrated magnetic vector switching for...

5dec99ca437e20578da3642d6cebd4e61
2008-12-10 11:22:12

A group of scientists at Korea Advanced Institute of Science and Technology (KAIST) has fabricated a working computer chip that is almost completely clear -- the first of its kind. The new technology, called transparent resistive random access memory (TRRAM), is described in this week's issue of the journal Applied Physics Letters, which is published by the American Institute of Physics. The new chip is similar in type to an existing technology known as complementary metal-oxide semiconductor...