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Latest Schottky barrier Stories

2014-09-03 12:35:20

Feature Compact Packages; Optimized Diode Process for use in Small, Portable Consumer Devices IRVINE, Calif., Sept.

2014-04-28 23:09:44

Ultra-low forward voltages and high current density in the thinnest package available for this product category – the optimal choice for smartphone and tablet chargers Eindhoven,

Study Shows Another Feature That Affects Electron Transport In Graphene
2013-11-21 16:27:26

For all the promise of graphene as a material for next-generation electronics and quantum computing, scientists still don't know enough about this high-performance conductor to effectively control an electric current.

2011-03-30 14:25:00

SAN DIEGO, March 30, 2011 /PRNewswire/ --ROHM Semiconductor announces the availability of the SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD).

2008-08-08 00:00:12

Company's Broad Micro-Package Discrete Portfolio Helps Designers Meet Design Challenges in Space-Constrained Portable Applications ON Semiconductor, Phoenix Emily Puckett, 602-244-5670 (Marketing Communications) emily.puckett@onsemi.com Ken Rizvi, 602-244-3437 (Investor Relations) ken.rizvi@onsemi.com Logo: http://www.onsemi.com ON Semiconductor (Nasdaq: ONNN), a global leader of efficient power semiconductor solutions, has announced the expansion of its discrete packaging portfolio...

c03822953f2d66734bd3c7f3635e2364
2005-06-30 14:45:00

The NIST design, described in a paper published June 29 by the journal Nanotechnology,* uses a simplified type of contact between the nanowire channel and the positive and negative electrodes of the transistor.


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