Latest Schottky diode Stories
SAN DIEGO, March 30, 2011 /PRNewswire/ --ROHM Semiconductor announces the availability of the SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD).
Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies â€“ but these GaN devices traditionally break down when exposed to high voltages.
GENEVA, Nov. 3, 2010 /PRNewswire/ -- STMicroelectronics (NYSE: STM), a world leader in power semiconductors, has released details of a patented high-efficiency circuit and dedicated optimized power components.
Improved control of 'neglected middle-child' frequency range offers potential benefits.