Latest Transistor Stories

New data from Chinese-Danish collaboration shows that organic nanoscale wires could be an alternative to silicon in computer chips. The discovery has just been published in the respected scientific journal, Advanced Materials.Nanochemists from the Chinese Academy of Sciences and the Nano-Science Center, Department of Chemistry have developed nanoscale electric contacts out of organic and inorganic nanowires. In the contact they have crossed the wires like Mikado sticks and coupled several...

An international team of researchers from the Netherlands, Russia and Austria discovered that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs). This opens the door to extremely sensitive chemical sensors that can be produced in a cost-effective way. The research was done at Philips Research Eindhoven and Eindhoven University of Technology. The findings were published as an Advanced Online Publication in Nature...

Modeling the fabrication processes for integrated circuits can slash production development time and costs by up to 40%. But as transistors, already at nano-scales, become ever smaller, researchers are modeling new worlds.Over the past seven years, the microprocessors in everyday electronic equipment have delivered astonishing advances in speed while reducing power consumption per transistor.That is because the scale of the transistors manufactured in high volumes for these electronic devices...

MARINA DEL REY, Calif., July 28 /PRNewswire/ -- The MOSIS Service, a leading provider of semiconductor fabrication solutions, today announced that it has expanded its relationship with IBM to now include silicon-on-insulator (SOI) technology at multiple advanced lithography nodes. MOSIS is offering IBM's 45-nm SOI technology on 300mm wafers and IBM's 180-nm SOI technology on 200mm wafers. MOSIS customers now have a low-cost route to prototyping and low-volume production with leading-edge...

Scientists at Rice University and North Carolina State University have found a method of attaching molecules to semiconducting silicon that may help manufacturers reach beyond the current limits of Moore's Law as they make microprocessors both smaller and more powerful.Their findings are published this month by the Journal of the American Chemical Society.Moore's Law, suggested by Intel co-founder Gordon Moore in 1965, said the number of transistors that can be placed on an integrated circuit...

IMEC has achieved promising results in the race to scale CMOS to 22nm and below. The breakthroughs from its transistor scaling programs include a successful integration of the laser-anneal technique in a high-K/metal-gate first process and a step forward towards fabricating aggressively scaled germanium-pFET transistors.To scale CMOS technology to 22nm and below, high permittivity dielectrics and metal gates (Hk/MG) are considered as one of the best options. One Hk/MG integration scheme is...

IMEC today announces the launch of a new industrial affiliation program (IIAP) that will focus on the development of GaN technology for both power conversion and solid state lighting applications. An important goal of the program is to lower GaN technology cost by using large-diameter GaN-on-Si and hence by leveraging on the Si scale of economics.The scope of the IIAP is to develop high-voltage, low-loss, high-power switching devices based on large-diameter (up to 200mm) GaN-on-Si...

U.S. scientists have constructed a light-emitting transistor that has set a record for a signal-processing modulation speed. University of Illinois researchers said they achieved a speed of 4.3 gigahertz, breaking the previous record of 1.7 gigahertz held by a light-emitting diode. Then by internally connecting the base and collector of a light-emitting transistor, they also created a new form of light-emitting diode, which modulates up to 7 gigahertz -- breaking the speed record once...

 Researchers have constructed a light-emitting transistor that has set a new record with a signal-processing modulation speed of 4.3 gigahertz, breaking the previous record of 1.7 gigahertz held by a light-emitting diode.But, the researchers didn't stop there. By internally connecting the base and collector of a light-emitting transistor, they created a new form of light-emitting diode, which modulates at up to 7 gigahertz, breaking the speed record once again.In a pair of papers published...

Innovations on 130nm process enable further new STM8S and STM32F product paths allowing customers to attack new markets and applications GENEVA, June 15 /PRNewswire/ -- STMicroelectronics (NYSE: STM), a world leader in microcontrollers, has announced details of a new ultra-low-power technology platform for building a range of 8-bit and 32-bit microcontrollers, which will enable future generations of electronic products to consume less power, meet evolving energy-efficiency standards, and...