Latest Transistor Stories
Scientists show that non-volatile memory made from a sandwich of silver nanoparticle-laced plastic retains its on/off state over a wider voltage range when operating at toasty temperatures.
Taking advantage of the unique properties of zinc oxide nanowires, researchers have demonstrated a new type of piezoelectric resistive switching device in which the write-read access of memory cells is controlled by electromechanical modulation.
IRVINE, Calif., July 26, 2011 /PRNewswire/ -- Toshiba America Electronic Components, Inc., (TAEC)* has announced the addition of the SSM3K37 series of Nch Standard MOSFETs for mobile devices.
IRVINE, Calif., July 19, 2011 /PRNewswire/ -- Toshiba America Electronic Components, Inc., (TAEC)* has announced the addition of the SSM6P47NU and SSM6P49NU to its lineup of small signal MOSFETs.
WASHINGTON, July 9, 2011 /PRNewswire-USNewswire/ -- Following is the daily "Profile America" feature from the U.S. Census Bureau: (Logo: http://photos.prnewswire.com/prnh/20090226/CENSUSLOGO) SATURDAY, JULY 9: TRANSISTOR Profile America -- Saturday, July 9th.
SANTA CLARA, Calif., June 20, 2011 /PRNewswire/ -- National Semiconductor Corp. (NYSE: NSM) today introduced the industry's first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters.
IBM Research scientists announced Friday they have achieved a significant breakthrough in creating a building block for the future of wireless devices: a circuit the thickness of an atom that will allow for the ability of mobile gadgets to receive signals or even scan people for hidden weapons.
YORKTOWN HEIGHTS, N.Y., June 10, 2011 /PRNewswire/ -- Today, IBM (NYSE: IBM) Research scientists announced that they have achieved a milestone in creating a building block for the future of wireless devices.
BALTIMORE, Md., June 7, 2011 /PRNewswire/ -- 2011 INTERNATIONAL MICROWAVE SYMPOSIUM, BALTIMORE, Booth #2306 - This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc.
MILPITAS, Calif., June 7, 2011 /PRNewswire/ -- Open-Silicon, Inc. announced today it achieved a key milestone in demonstrating its low-power design capability on GLOBALFOUNDRIES' 28nm super low-power (SLP) technology.
A transistor, made of a solid piece of semiconductor material, is a semiconductor device used to amplify and switch electronic signals. It has at least three terminals for connection to an external circuit. A voltage or current applied to one pair of transistor's terminals changes the current flowing through another pair of terminals. The transistor amplifies the signal since the controlled power can be much more than the controlling power. The transistor is a fundamental building block of...
A chip, also known as an integrated circuit, is a miniaturized electronic circuit consisting mainly of semiconductor devices and passive components, that has been manufactured in the surface of a thin substrate of semiconductor material. There are many different types of chips: microcircuit, microchip, silicon chip, etc. Integrated circuits are regularly used in present-day electronic equipment and have modernized the world of electronics. Computers, cellular phones, and other electronic...
Germanium is a chemical element in the periodic table that has the symbol Ge and atomic number 32. This is a lustrous, hard, silver-white, metalloid that is chemically similar to tin. Germanium forms a large number of organometallic compounds and is an important semiconductor material used in transistors. Notable characteristics Germanium is a hard, grayish-white element that has a metallic luster and the same crystal structure as diamond. In addition, it is important to note that...
- A transitional zone between two communities containing the characteristic species of each.