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Latest Tunnel magnetoresistance Stories

2014-10-10 23:02:32

Magnetic field sensors market research report categorizes the global market on the basis of the different types of magnetic field sensors used in electronic systems, different magnetic technologies prevailing in the market. (http://www.marketsandmarkets.com/Market-Reports/magnetic-field-sensors-market-521.html) (PRWEB) October 10, 2014 The report "Magnetic Field Sensors Market by Type, Technology, Applications and Geography - Forecasts & Analysis to 2013 -2020”, defines and...

2011-03-09 18:22:48

Tomorrow's nonvolatile memory devices "“ computer memory that can retain stored information even when not powered "“ will profoundly change electronics, and Cornell University researchers have discovered a new way of measuring and optimizing their performance. Using a very fast oscilloscope, researchers led by Dan Ralph, the Horace White Professor of Physics, and Robert Buhrman, the J.E. Sweet Professor of Applied and Engineering Physics, have figured out how to quantify the...

2010-11-18 12:44:00

MILPITAS, Calif., Nov. 18, 2010 /PRNewswire/ -- Grandis, Inc., the leader in spin transfer torque random access memory (STT-RAM), today announced that it has been awarded a new contract from the Defense Advanced Research Projects Agency (DARPA) to develop non-volatile spin logic. Under the contract, the company will expand its cutting-edge development of spintronics and advanced magnetic materials beyond non-volatile STT-RAM memory into non-volatile logic applications. Non-volatile spin...

2010-01-19 17:51:34

Electric control of aligned Spins improves Computer Memory Researchers from Helmholtz-Zentrum Berlin (HZB) and the French research facility CNRS, south of Paris, are using electric fields to manipulate the property of electrons known as "spin" to store data permanently. This principle could not only improve random access memory in computers, it could also revolutionize the next generation of electronic devices. This new kind of memory exploits a phenomenon called "tunnel magnetoresistance" or...

2009-09-21 08:01:00

BOSTON, Sept. 21 /PRNewswire/ -- Spin Transfer Technologies is proud to announce a recent breakthrough in spin transfer MRAM development, in its sponsored research at New York University. Spin transfer MRAM, a new form of non-volatile computer memory, has seen much development attention by major memory manufacturers. Researchers in the Physics Department at New York University, working with engineering support from Spin Transfer Technologies, have demonstrated magnetic vector switching for...

2009-03-12 15:09:02

U.S. and Japanese physicists say they have demonstrated proof of principle of the existence of a 'spin battery' that's about the diameter of a human hair. Researchers at the University of Miami and the Universities of Tokyo and Tohoku in Japan said the battery is charged by applying a large magnetic field to nano-magnets in a device called a magnetic tunnel junction. They said the new technology is a step toward creation of computer hard drives with no moving parts and might be developed to...

2008-11-06 06:00:06

Aviza Technology, Inc. (NASDAQ:AVZA), a supplier of advanced semiconductor capital equipment and process technologies for the global semiconductor industry and related markets, today announced the introduction of StratIon(TM) fxP, the world's first 300-mm ready Ion Beam Deposition system. The first system was shipped to CEA-LETI-MINATEC in Grenoble, France, one of Europe's foremost applied research centers in electronics and Spintronics. The StratIon fxP will be used to develop...


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